Integrated Artificial Neural Network with Trainable Activation Function Enabled by Topological Insulator-Based Spin-Orbit Torque Devices

Puyang Huang,Xinqi Liu,Yue Xin,Yu Gu,Albert Lee,Yifan Zhang,Zhuo Xu,Peng Chen,Yu Zhang,Weijie Deng,Guoqiang Yu,Di Wu,Zhongkai Liu,Qi Yao,Yumeng Yang,Zhifeng Zhu,Xufeng Kou
DOI: https://doi.org/10.1021/acsnano.4c03278
IF: 17.1
2024-10-17
ACS Nano
Abstract:Nonvolatile memristors offer a salient platform for artificial neural network (ANN), yet the integration of different function and algorithm blocks into one hardware system remains challenging. Here we demonstrate the brain-like synaptic (SOT-S) and neuronal (SOT-N) functions in the Bi(2)Te(3)/CrTe(2) heterostructure-based spin-orbit torque (SOT) device. The SOT-S unit exhibits highly linear and symmetrical long-term potentiation/depression process, resulting in a fast-training of the MNIST data...
materials science, multidisciplinary,chemistry, physical,nanoscience & nanotechnology
What problem does this paper attempt to address?