Abstract:Understanding the crystallization mechanism of amorphous metal-oxide thin films remains of importance to avoid the deterioration of multifunctional flexible electronics. We derived the crystallization mechanism of indium-based functional amorphous oxide films by using in situ X-ray diffraction (XRD) and transmission electron microscopy (TEM) measurements. Crystallization begins with surface nucleation, especially at low annealing temperatures, and proceeds simultaneous nucleation and growth in the bulk. Three-dimensional crystal growth in the film was observed when the crystallite size was sufficiently smaller than the film thickness. When the growing crystallites reached the film surface, the crystallization was dominated by two- or lower-dimensional growth. Such crystallization can be explained within the framework of the modified Avrami theory and can be varied for tailoring the electrical properties of the amorphous In2O3 film. After tailoring the film crystallinity and crystallite size, the carrier mobility was improved to >100 cm2/V·s in 30 min. Our results show that a carrier mobility of >90 cm2/V·s can be implemented for the In2O3 film with a crystallinity of >40% and a crystallite size of >70 nm by an optimized annealing process. The incorporation of Ga element into amorphous In2O3 films obviously increases the activation energy of nucleation and migration. In contrast, Sn dopants can promote the crystal growth. This is attributed to two kinds of migration mechanisms during the annealing in air, one of which is the dominant migration mechanism of oxygen interstitials in crystallized indium–tin oxide (ITO) films and the other dominated by oxygen vacancies in In2O3 and IGO films. Combining the modified Avrami theory with TEM observations, we predicted the structural evolution kinetics for indium-based amorphous oxide films and gained new insights for understanding the temporal structure–functionality relationship during crystallization.This article has not yet been cited by other publications.

Temporal Evolution of Microscopic Structure and Functionality during Crystallization of Amorphous Indium-Based Oxide Films

Local Disordering in the Amorphous Network of a Solution-Processed Indium Tin Oxide Thin Film

Same Precursor, Two Different Products: Comparing the Structural Evolution of In-Ga-O "Gel-Derived" Powders and Solution-Cast Films Using Pair Distribution Function Analysis

Boosting carrier mobility and stability in indium–zinc–tin oxide thin-film transistors through controlled crystallization

Nucleation and grain growth in low-temperature rapid solid-phase crystallization of hydrogen-doped indium oxide

Low-temperature crystallization of indium oxide thin films with a photoactivable additive

Improvement of Electrochromic Performance by Embedding ITO Nanocrystals in Amorphous WO3 Film

In situ observation of two-step crystallization of amorphous oxides via electron microscopy

Evolution of local atomic structure accompanying devitrification of amorphous Ni-Zr alloy thin films

Non-isothermal crystallisation behaviour of a Cr–Fe–Ni–Co–Mo–Si amorphous coating

Structural dynamics in thermal-treatment of amorphous indium-oxide films

Fluoride Doping in Crystalline and Amorphous Indium Oxide Semiconductors

The effect of the crystallization of indium tin oxide on indium tin oxide wet etching based on gate line with the structure of copper/indium tin oxide

High mobility ultra-thin crystalline indium oxide thin film transistor using atomic layer deposition

Appearance of amorphous phase in crystalline In-Y codoped ZnO thin films

Effect of chromium-doping on structure and opto-electronics properties of nanostructured indium tin oxide thin films

Thermal Transport Evolution Due to Nanostructural Transformations in Ga-Doped Indium-Tin-Oxide Thin Films

Theoretical explanation of different crystallization processes between as-deposited and melt-quenched amorphous Ge2Sb2Te5 thin films

Characterization of nanocrystalline indium tin oxide thin films prepared by ion beam sputter deposition method

Sputtering deposition of dense and low-resistive amorphous In2O3: Sn films under ZONE-T conditions of Thornton's structural diagram