Solution-treated Al-doped NiOx As the Hole Transport Layer for All-Metal Oxide-Based Inverted Inorganic Perovskite Solar Cells

Cheng Zuo,Zhongchen Bai,Qixin Chen,Yiheng Yuan,Xishun Peng,Xinghua Li,Zhangyu Zhou,Zhengping Zhang
DOI: https://doi.org/10.1063/5.0212987
IF: 4
2024-01-01
Applied Physics Letters
Abstract:In order to achieve low cost and high stability metal oxide-based inverted planar perovskite solar cells (IPSCs), we designed Al-doped NiOx (ANO) films as the hole transport layer (HTL) to prepare a solar cell with ITO/ANO/CsPbBr3/ZnO/carbon structure. The results showed that compared to the pristine NiOx film, ANO-8 (8% Al doping) film could not only provide higher conductivity and carrier mobility, but also form a good interfacial band alignment with the CsPbBr3 perovskite layer. Additionally, a better crystallization quality and larger grain size of CsPbBr3 films could be obtained on the ANO-8 HTL. Therefore, the champion efficiency based on this optimization strategy reached 6.72%, where the open circuit voltage (Voc) was 1.33 V and the short circuit current (J(sc)) was 8.11 mA/cm(2). After 28 days, the photoelectric conversion efficiency still retained 96.73% of the original efficiency in an air environment with 80% relative humidity and temperature of 25 degrees C, demonstrating considerable stability. These results provide a promising approach for achieving stable and reliable IPSCs with low-cost inorganic HTLs.
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