D-π-D molecular layer electronically bridges the NiO hole transport layer and the perovskite layer towards high performance photovoltaics
Rongguo Xu,Xiuwen Xu,Ruixi Luo,Yu Li,Gaopeng Wang,Tongfa Liu,Ning Cai,Shihe Yang
DOI: https://doi.org/10.1016/j.jechem.2021.11.029
IF: 13.1
2022-04-01
Journal of Energy Chemistry
Abstract:Nickel oxide (NiO x ) has significant cost and stability advantages over poly[bis (4-phenyl)(2,4,6-trimethylphenyl)amine] (PTAA) for inverted p-i-n perovskite solar cells (PSCs), but the poor NiO x /perovskite contact stemming from some reactive species at the interface led to suboptimal device performance. To solve this problem, we take a multiple donor molecule approach, using 3,3′-(4,8-bis(hexylthio)benzo[1,2-b:4,5-b']dithiophene-2,6-diyl)bis(10-(6-bromohexyl)-10H-phenoxazine) (BDT-POZ) as an example, to modify the NiO x /perovskite interface. The primary goal was to reduce the under-coordinated Ni≥3+ cations via electron transfer from the donor molecules to NiO x , thus mitigating the detrimental reactions between perovskite and NiO x . Equally importantly, the hole extraction at the interface was greatly enhanced after the organic donor modification, since the hydrophobic species atop NiO x not only enabled pinhole-free crystallization of the perovskite but also properly tuned the interfacial energy level alignment. Consequently, the PSCs with NiO x /BDT-POZ HTL achieved a high power conversion efficiency (PCE) up to 20.16%, which compared excellently with that of the non-modified devices (17.83%). This work provides a new strategy to tackle the exacting issues that have so far impeded the development of NiO x based PSCs.
chemistry, physical,engineering, chemical, applied,energy & fuels