Dynamic Stability of High-Efficiency Quantum Dot Light-Emitting Diodes

Hongbo Li,Xiaonan Liu,Yan Gao,Bo Li,Yansong Yue,Jing Wei,Zhenhui Wu,Fangze Liu,Huaibin Shen

DOI: https://doi.org/10.21203/rs.3.rs-5370454/v1

2024-01-01

Abstract:Quantum dot light-emitting diodes (QD-LEDs) hold great potential for enabling ultra-clear and ultra-bright displays technologies. Although the operational lifetime of QD-LEDs under static conditions has reached commercial standard, their dynamic stability, i.e., performance consistency while being switched on and off, remains largely behind that of state-of-the-art III-V LEDs. In this work, we studied the degradation mechanism of red QD-LEDs with high external quantum efficiency (EQE) and long static operational lifetime and found that the accelerated EQE decline is mainly due to the fast-increasing electron leakage into the organic hole transport layer (HTL) under continuous voltage scans. To improve the dynamic stability of QD-LEDs, we refined the structure of CdZnSe/ZnSe QDs by introducing a ZnSeS/ZnS outer shell, where the ZnS shell improves the electron confinement and the ZnSeS mitigates the lattice mismatch between ZnSe and ZnS. Consequently, the electron leakage into the HTL is significantly inhibited, leading to QD-LEDs with minimal EQE drop of less than 4% after more than 5,000 voltage cycles within the range between 0 V and 4.5 V, while the devices still possess excellent static stability for maintaining 95% of its initial luminance (T95) at 1,000 cd m-2 for over 61,000 h.