Abstract:Electrical stability and field-effect mobility of two-dimensional (2D) material-based field-effect transistors (FETs) are extremely important for practical electronic applications. Interface scattering during the transmission of 2D materials, which can be significantly influenced by the interface between dielectric and 2D materials, remains a formidable challenge. Early work has achieved excellent mobility and on/off ratio, but the understanding and improvement of the electrical stability of MoS2 devices are still in their infancy. Herein, a facile and effective strategy is proposed via a spin-coated polymethyl methacrylate (PMMA) dual layer to enhance both field-effect mobility and electrical stability of molybdenum disulfide (MoS2) FETs, in which the PMMA underneath MoS2 works as a gate dielectric together with SiO2 and the PMMA on top of MoS2 is used to protect the FET channel from exposure to air. The field-effect electron mobility has been improved up to 2.5 times, from 41.8 to 104.6 cm(2)/Vs, by using PMMA/SiO2 as the back gate dielectric and PMMA capsulation layer. The time- and stress-dependent electrical stability has been essentially improved. A negligible threshold voltage shift (Delta Vth < 0.1 V) and field-effect mobility degradation (1.4%) are achieved upon a gate bias voltage of +/- 35 V applied for 300 s, even after 45 day storage in open air. The effective suppression of interface impurities located at the channel interface contributes to the electrical performance enhancement of MoS2 FETs. Furthermore, a theoretical model was developed to investigate different MoS2/dielectric interface structures by density functional theory (DFT), which is consistent with interface scattering theory. This study not only provides a clue for the high-performance 2D FET fabrication but also offers an opportunity to understand the electrical property degradation mechanism of the 2D material family devices, pushing forward their practical applications in the 2D devices and flexible electronics.

Improved Thermal Dissipation in a MoS2 Field-Effect Transistor by Hybrid High-k Dielectric Layers

Improved Thermal Dissipation in a MoS 2 Field-Effect Transistor by Hybrid High- k Dielectric Layers

Effect of Dielectric Interface on the Performance of MoS2 Transistors.

Construction of High Field-Effect Mobility Multilayer MoS2 Field-Effect Transistors with Excellent Stability Through Interface Engineering

Performance and stability improvement of CVD monolayer MoS2 transistors through HfO2 dielectrics engineering

Electrical performance of multilayer MoS2 transistors on high-κ Al2O3 coated Si substrates

Enhancement of Thermal Boundary Conductance Between MoS2 and Dielectric Layer by Self‐Assembled Monolayers

Near-Ideal Subthreshold Swing Mos2 Back-Gate Transistors With An Optimized Ultrathin Hfo2 Dielectric Layer

Improved Interfacial and Electrical Properties of MoS2Transistor with High/Low-Temperature Grown Hf0.5Al0.5O As Top-Gate Dielectric

Self-Heating Effect in a MoS2 Field-Effect Transistor and Improved Heat Dissipation by the BN Capping Layer

Improved Gate Dielectric Deposition and Enhanced Electrical Stability for Single-Layer MoS 2 MOSFET with an AlN Interfacial Layer

Electrical Performance Of Multilayer Mos2 Transistors On High-Kappa Al2o3 Coated Si Substrates

Improved Performance of Top-Gated Multilayer MoS2 Transistors with Channel Fully Encapsulated by Al2O3 Dielectric

Optimizing Al-doped ZrO2 As the Gate Dielectric for MoS2 Field-Effect Transistors.

Impacts of interface contaminations on the MoS2 field effect transistors and a modified fabrication process to pursue a better interface quality

Monolayer MoS2-based Transistors with Low Contact Resistance by Inserting Ultrathin Al2O3 Interfacial Layer

( )improved Electrical Performance of Multilayer MoS2 Transistor by Incorporating Al into Host HfO2 As Gate Dielectric

Enhancing the Performance of MoS2 Field-Effect Transistors Using Self-Assembled Monolayers: A Promising Strategy to Alleviate Dielectric Layer Scattering and Improve Device Performance

High-Performance Wafer-Scale MoS2 Transistors Toward Practical Application

Thermal Management in MoS2 Based Integrated Device Using Near-Field Radiation

Improved performance in MoS2 homogeneous junction field effect transistors by optimizing electrodes contact