Nanoelectronics: Materials, Devices and Applications

Chunchang Wang

DOI: https://doi.org/10.3390/nano14211716

2024-01-01

Abstract:The semiconductor industry is facing concerns regarding the saturation of Moore’s Law [...]

What problem does this paper attempt to address?

Nanoelectronic Materials, Devices and Modeling: Current Research Trends

Hao Zhu,Qiliang Li

DOI: https://doi.org/10.3390/electronics8050564

IF: 2.9

2019-01-01

Electronics

Abstract:As CMOS scaling is approaching the fundamental physical limits, a wide range of new nanoelectronic materials and devices have been proposed and explored to extend and/or replace the current electronic devices and circuits so as to maintain progress in speed and integration density [...]
Nanoelectronics, Circuits and Nanoprocessors

Anqi Zhang,Gengfeng Zheng,Charles M. Lieber

DOI: https://doi.org/10.1007/978-3-319-41981-7_5

IF: 17.694

2016-01-01

NanoScience and Technology

Abstract:As electronic device features have been pushed into the deep sub-100-nm regime, conventional scaling strategies in the semiconductor industry have faced technological and economic challenges. Electronics obtained through the bottom-up approach of molecular-level control of material composition and structure may lead to devices and fabrication strategies as well as new architectures not readily accessible or even possible within the context of the top-down driven industry and manufacturing infrastructure. This chapter presents a summary of recent advances in basic nanoelectronics devices, simple circuits and nanoprocessors assembled by semiconductor NWs.
Carbon Based Nanoelectronics: Materials and Devices

PENG LianMao,ZHANG ZhiYong,WANG Sheng,LIANG XueLei

DOI: https://doi.org/10.1360/n092014-00304

2014-01-01

Abstract:The foundation for modern information technology (IT) is integrated circuits chips, and more than 90% of the chips are composed of devices fabricated using complementary metal-oxide-semiconductor (CMOS) nanotechnology. After miraculous developments of five decades, Si CMOS is moving into 14 nm node, and will arrive at its absolute performance limit before 2020. And research on nanoelectronics beyond 2020 is urgently needed. It now becomes a generally accepted fact that we may have to face the possibility of giving up silicon when come to 8 nm technology node, and nanoelectronics using non-Si materials may shake the very foundation of the semiconductor and IT industry. Among the few options being considered, carbon based nanoelectronics, including those using carbon nanotube (CNT) and graphene, are regarded being most promising. Recent developments in Peking University suggest that in 14 nm technology node, CNT based transistors outperform that of Si devices by about 10 times both in terms of speed and power dissipation, and it will become ever more advantageous when scaled further down to sub-10 nm regime.
Computational Electromagnetics for Nanodevices

Li, Erping

DOI: https://doi.org/10.1049/cp.2011.0008

2011-01-01

Abstract:Technological advancements have driven the humanity for the past five decades. In many of these technological advances, computational electromagnetics has played a major role. From the design of aeroplanes down to consumer electronics, the field of computational electromagnetics has been growing steadily in terms of maturity, complexity, as well as performance. However, innovation does not seem to slow down anytime soon. The dimension of technological devices continues to shrink down to nano scale. This also results in an ongoing research in the field of nano photonics to bring the speed of light down to the nano scale regime and integrate them with electronics. All these new advances demand a new and further development of current techniques for computational electromagnetics. In this paper, we will present some of our works that tackles the issue of computational electromagnetics as it is applied to nanoscale devices.
Nano-semiconductor Materials in Photo-electronic Fields

牛俊杰,沙健,马向阳,张辉,杨青,杨德仁

DOI: https://doi.org/10.3321/j.issn:1005-023x.2002.11.020

2002-01-01

Abstract:Recently,research on nano-semiconductor materials in photo-electronic fields has drawn more and more interest.Nano-semiconductor materials show outstanding properties because of their quantum confinement effects,size effects.They are expected to play a key role in future micro-electronics and nano-electronics.This paper describes the history,current status and limitations of nano-semiconductor materials in photo-electronic fields.
New device technologies of integrated circuit in post-Moore era

HUANG Ru,LI Ming,AN Xia,WANG RunSheng,CAI YiMao

DOI: https://doi.org/10.1360/112012-509

2012-01-01

Abstract:With the continuous development of large scale integrated circuit(IC) technology,challenges resulting from short channel effects,quantum tunneling and parasitic effects make it increasingly difficult for conventional microelectronic device technology to fulfill the demand of sustaining progressing of IC technology node,and especially the increasingly serious problem of energy consumption has been the greatest bottleneck in continuing Moore's Law,making it inevitable to take advantage of new device technology in post-Moore's era.Therefore,it has become a hot issue that how to develop nanoscale new devices to meet the future demands of microelectronic industry in different IC applications.In this paper,we introduce new device technologies from viewpoints of new structure,new principle and new material,including FinFET,UTB SOI devices,quasi-SOI devices,MultiGate/Gate-All-Around silicon nanowire devices,super steep sub-threshold swing devices and high mobility channel devices.Advantages,existing problems,potential solutions and application prospect of these devices are analyzed,and a roadmap for new device technology in post-Moore era is discussed.
Carbon based electronic technology in post-Moore era: progress, applications and challenges

Yi-Fan Liu,Zhi-Yong Zhang,

DOI: https://doi.org/10.7498/aps.71.20212076

IF: 0.906

2022-01-01

Acta Physica Sinica

Abstract:In the past 60 years, silicon-based semiconductor technology has triggered off the profound change of our information society, but it is also gradually approaching to the physical limit and engineering limit as well. Thus, the global semiconductor industry has entered into the post-Moore era. Carbon nanotube has many excellent electronic properties such as high mobility and ultra-thin body, so it has become a hopeful candidate for the new semiconductor material in the post-Moore era. After more than 20 years of development, carbon based electronic technology has made fundamental breakthroughs in many basic problems such as material preparation, Ohmic metal-semiconductor contact and gate engineering. In principle, there is no insurmountable obstacle in its industrialization process now. Therefore, in this paper the intrinsic advantages of carbon based electronic technology in the post-Moore era is introduced, the basic problems, progress and optimization direction of carbon based electronic technology are summarized, the application prospects in the fields of digital circuits, radio frequency electronics, sensing and detection, three-dimensional integration and chips for special applications are presented. Finally, the comprehensive challenges to the industrialization of carbon based electronic technology are analyzed, and its future development is also prospected.

physics, multidisciplinary
(Keynote) Technological Challenges and Emerging Device Architectures for Future Semiconductor Micro and Nanoelectronics

Cor Claeys,Eddy Simoen

DOI: https://doi.org/10.1149/ma2023-01331847mtgabs

2023-08-28

ECS Meeting Abstracts

Abstract:Semiconductor technology has known an exponential evolution in the last decades and is fully integrated in our everyday life. According to the Semiconductor Industry association (SIA) the global semiconductor industry sales reaches about US$ 700 billion in 2023, corresponding with a shipment of more than 1.2 trillion components. This necessitates implementation of many novel materials, advanced design concepts and new transistor structures. Increased device performance and reduced power consumption, while maintaining a good manufacturability and yield performance without penalizing the cost/function, are driving microelectronic research towards 3-nm technologies. A large variety of device architectures such as FinFETs, TFETs, negative capacitance, Gate-All-Around, nanowires (NWs), nanosheets (NSs) in both horizontal or vertical configurations, CFET and Forksheet structures are extensively investigated for both logic and analog/RF building blocks enabling System-on-Chip (SoC) applications. In addition to the huge progress achieved in silicon technology, heterogenous integration of Ge and III-V technologies on a silicon platform shows a strong potential, leading towards the on-chip integration of building blocks with different functionality. The fact that both Ge and III-V materials can be selectively grown on Si has strongly triggered the interest in heterogeneous integration. Wide bandgap materials such as GaN offer unique features for RF applications used in base stations for mobile communication, complementing the performance of Si devices suffering from limited output power. These materials can epitaxially be grown on Si substrates. One of the main challenges related to the hetero epitaxy of III-V materials on a Si substrate is the control of extended defects due to the lattice mismatch of the different materials. In recent years, there has been a strong increase in the commercial availability of GaN devices, although for certain applications there is a competition with SiC. Complex and dense SoC applications can be realized by 3D wafer stacking using Through-Silicon-Vias (TSV) for wafer-to-wafer bonding. The 3D integration results in a reduction of the RC product and interconnect length, a smaller form factor and enables vertical partitioning. Main challenges are the TSV process module itself (e.g. Cu via filling, mechanical stress, contamination, keep-out-zone), the wafer thinning and handling and the 3D stacking technology (stacking density, pitch, chip-to-chip interconnect etc.). Very promising results are obtained for monolithic sequential 3D (S3D) processing based on the processing of different tiers on top of each other. Difference can be made between transistor level (n- and pMOS), CMOS level (different standard cells in different tiers) and IP block level for the partitioning. In this way it is e.g. possible to process first CMOS circuits in the Si substrate and then further processing in a III-V layer on top. Benefits are related to an enhanced device density per chip area and a shorter interconnection length. A low cost less scalable tier can be processed on top of an expensive scalable tier as done in the case of logic-memory integration. Major trends in above mentioned process integration approaches are reviewed and technological challenges of some process modules and device structures highlighted.
Research directions and challenges in nanoelectronics

R. K. Cavin,V. V. Zhirnov,D. J. C. Herr,Alba Avila,J. Hutchby

DOI: https://doi.org/10.1007/s11051-006-9123-4

IF: 2.533

2006-09-23

Journal of Nanoparticle Research

Abstract:The search for alternate information processing technologies to sustain Moore's Law improvements beyond those attainable by scaling of charge-based devices encompasses several key technologies. Some of these technologies were explored at the Third Workshop on Silicon Nanoelectronics and Beyond (SNB III) held at the National Science Foundation in Washington DC in December 2005. They included: (1) non-charge-based devices; (2) devices operated out of thermal equilibrium; (3) alternative interconnect systems; (4) thermal extraction limits and technologies; and (5) fabrication via directed self-assembly. Although this paper was inspired by this highly successful workshop, it is not intended as a summary, but rather an assessment by the authors of some of the fundamental physical considerations evident at the present time.

materials science, multidisciplinary,nanoscience & nanotechnology,chemistry
Advances In Si-Based Nanotechnology And Quantum Devices

Peiyi Chen,Ning Deng,Lei Zhang

DOI: https://doi.org/10.1109/icsict.2004.1436645

2004-01-01

Abstract:The preparation technologies of nano-structures were reviewed in this paper, included nano-fabrication and self-assembled growth technique. With the down sizing of present silicon IC technology validity of Moore's law has become seemingly limited, because the feature size of Si ULSI has reached nanometer regime. It is unavoidable that quantum effects play very important role in the nano-architectures. Microelectronic industry faces the severe challenge and opportunities. However, it IS undoubted that the novel materials, for example, carbon nanotubes, will provide some solution for future nano-scaling architectures and devices, such as CNT-FET, but it is still a question whether CNT-based technology will actually contribute to the existing CMOS technology or it is totally new device architecture from CMOS technology. The Si-based quantum devices, included electronic and optoelectronic devices, are presented in this paper, they are based on quantum effects and fabricated by the processing compatible with Si IC technology.
Review of Advanced CMOS Technology for Post-Moore Era

Ming Li

DOI: https://doi.org/10.1007/s11433-012-4930-3

2012-01-01

Science China Physics Mechanics and Astronomy

Abstract:The continuous downsizing of device has sustained Moore’s law in the past 40 years. As the power dissipation becomes more and more serious, a lot of emerging technologies have been adopted in the past decade to solve the short channel effect, leakage and performance degradation problems. In this paper, the emerging scaling technologies and device innovations, including high-k/metal gate, strain, ultra-shallow junction, tri-gate FinFET, extremely thin SOI and silicon nanowire FET will be reviewed and discussed in terms of the potential and challenge for post-Moore era.
On the ESD Protection and Non-Fatal ESD Strike on Nano CMOS Devices

H. Wong,S. Dong,Z. Chen

DOI: https://doi.org/10.1109/miel.2019.8889652

2019-01-01

Abstract:Electrostatic discharge (ESD) has been one of the major causes for the failure of electronic equipment and components and have attracted quite significant research efforts in minimizing the losses induced. Much tougher challenge comes up in the nano CMOS era. For the device technology itself, the aggressive scaling on gate length, high-k replacement of gate oxide, and the reduction of supply voltage have made the design window of ESD protection device be ever narrower. New ESD protection devices are yet to be developed for the 10 nm technology and beyond. For system and application level, the mobile devices we used right now are much vulnerable as they are more frequent to be exposed to various sources of ESD and power surges. Fatal ESD strike protection is always the primary design specification and should have been mostly fulfilled. The effects of non-fatal ESD strike has not attracted much attention yet. Recent experiment showed that the non-fatal ESD strikes at gate and drain can cause significant charge trapping and trap generation. It resulted in the device characteristic degradation and hence some reliability issues of CMOS circuits and the MOS-based ESD clamps. This review addresses all these issues in detail.
Challenges and Opportunities in Engineering of Next Generation 3D Microelectronic Devices: Improved Performance, Higher Integration Density

Niharika Singh,Ajay Kumar,Kingshuk Srivastava,Neha Yadav,Rajesh Singh,Ajay Singh Verma,Anita Gehlot,Ashish Kumar Yadav,aniruddha mondal,Tanuj Kumar,Kailash Pandey,Neha AGupta,Shalendra Kumar,ranjeet brajpuriya,Rajeev Gupta,Santosh Dubey,Yongling Wu,Hongyu Zheng

DOI: https://doi.org/10.1039/d4na00578c

IF: 5.598

2024-09-27

Nanoscale Advances

Abstract:In recent years, nanotechnology and material science have evolved and matured, making it easier and easier to design and fabricate next-generation 3D microelectronics. The process has changed drastically from traditional 2D microelectronics, resulting in improved performance, higher integration density, and new functionalities. As applications become more complex and power-hungry, this technology can address the demands of high-performance computing, advanced sensors, and cutting-edge communication systems via wearable, flexible devices, etc. To manufacture higher-density microelectronics, recent advances in the fabrication of such 3D devices are discussed. Furthermore, the paper stresses the importance of novel materials and architectures, such as monolithic 3D integration and heterogeneous integration, in overcoming these challenges. We emphasize the importance of addressing complex issues to achieve better performance and higher integration density, which will play an important role in shaping the next generation of microelectronic devices. Multifaceted challenges involved in developing next-generation 3D microelectronic devices are also highlighted.

materials science, multidisciplinary,nanoscience & nanotechnology,chemistry
Carbon-based CMOS Integrated Circuit Technology: Development Status and Future Challenges

Chenchen Liu,Zhiyong Zhang

DOI: https://doi.org/10.1360/ssc-2021-0075

2021-01-01

Scientia Sinica Chimica

Abstract:Carbon nanotubes, with their unique electrical performance, quasi-one-dimensional size and stable structure, hold great prospect to be the most ideal semiconductor material in post-Moore era. Significant process has been made in carbon-based electronics. High semiconductor purity (better than 99.9999%) and high density (100~200 CNTs/μm) arrays of CNTs can be obtained on 4-inch wafer. The gate length of CNFET can be scaled down to 5 nm with better performance than that of Si-FET. And the first carbon-based modern microprocessor, RV16X-NANO, has come out. This paper reviews the development of carbon nanotubes in materials, devices and integrated circuits, as well as their potential applications in some fields such as optoelectronics, sensor, display and radio frequency. Furthermore, this paper lists a series of challenges faced by carbon-based CMOS integrated circuits to realize continuous development and industrialization, and makes a further prospect for the development of carbon-based technology.
Advancing in Research of One-dimensional Silicon Nano-materials

卢晓敏,汪雷,杨青,杨德仁

DOI: https://doi.org/10.3321/j.issn:1005-023x.2004.09.022

2004-01-01

Abstract:As silicon is the most important semiconductor material in micro-electronic field,one-dimensional nano-structures of silicon play an important role in the fields of device assembly,nanometer-size magnetic device,photoelectronics,and have drawn wide interest in the world. Recent progress in the research on silicon nanowires and silicon nanotubes is reviewed,and the research will be done is suggested.
Electronics Based on Two-Dimensional Materials: Status and Outlook

Zeng Senfeng,Tang Zhaowu,Liu Chunsen,Zhou Peng

DOI: https://doi.org/10.1007/s12274-020-2945-z

IF: 9.9

2020-01-01

Nano Research

Abstract:Since Moore's law in the traditional semiconductor industry is facing shocks, More Moore and More than Moore are proposed as two paths to maintain the development of the semiconductor industry by adopting new architectures or new materials, in which the former is committed to the continued scaling of transistors for performance enhancement, and the latter pursues the realization of functional diversification of electronic systems. Two-dimensional (2D) materials are supposed to play an important role in these two paths. In More Moore, the ultimate thin thickness and the dangling-bond-free surface of 2D channels offer excellent gate electrostatics while avoiding the degradation of carrier mobility at the same time, so that the transistors can be further scaled down for higher performance. In More than Moore, devices based on 2D materials can well meet the requirements of electronic systems for functional diversity, like that they can operate at high frequency, exhibit excellent sensitivity to the changes in the surroundings at room temperature, have good mechanical flexibility, and so on. In this review, we present the application of 2D materials in More Moore and More than Moore domains of electronics, outlining their potential as a technological option for logic electronics, memory electronics, radio-frequency electronics, sensing electronics, and flexible electronics.
The Status and Trend of Novel Process and Technology in Nano-Ic Manufacturing

H. Felix Wu,Wu Guang,Jingang Wu,Herb HUANG,Shaofeng Yu,Soobin Lee,Weicheng Bu

DOI: https://doi.org/10.1360/132012-113-29

2012-01-01

Scientia Sinica Informationis

Abstract:The technology development of micro-nano electronics in global IC industry is summarized and reviewed in the present paper. There are many challenges and opportunities as the innovative devices and materials have gradually been applied to IC manufacture. As ITRS 2011 Roadmap shows that gate length will shrink to 20 nm in 2013, the industry mainstream manufacturing technologies of the nano-electronics seems moving toward the goal. It is well known that the IC technology development basically depends on material science. In Section 2, some new material and process technologies are highlighted, such as strained silicon, high K and metal gate, ultra-low K, 450 mm silicon wafer, and immersion lithography technologies are the foundation of IC manufacture. The process integration for advanced CMOS manufacture technology is discussed in Section 3. As an example, 20 nm process flow scheme is explained and some comparison is made to the precious generation technology. The main process flow difference between 28 nm technology and 20 nm technology is illustrated and some explanations are presented. In Section 4, 3D system packaging technology is introduced. Some preliminary TSV experimental data made by SMIC are shown. It is expected that 3D TSV Wide I/O would eventually be inevitable in 28 nm production and beyond. In Section 5, the research and development of nonvolatile memory are summarized, such as RRAM, PcRAM and MRAM. Some lab experimental and measurement results from SMIC are demonstrated. It is believed that PcRAM, which is relatively mature technology, mass production will probably come up in the mainland in a few years. In Section 6, a couple of new transistor architectures are introduced and some experimental data are demonstrated, such as local SOI and GAA, and some experimental data are shown. Finally, the comments for domestic R&D strategy in IC area are proposed to future IC R&D direction.
The Road to Chirality-Specific Growth of Single-Walled Carbon Nanotubes

Shuchen Zhang,Lianming Tong,Jin Zhang

DOI: https://doi.org/10.1093/nsr/nwx080

IF: 20.6

2017-01-01

National Science Review

Abstract:Moore’s law has been declared to be eventually nearing its end after nearly five decades,with silicon being the main building block for all computing chips[1].The main roadblock in the development of transistors is the occurrence of the tunneling effect when the devices become small enough.A possible solution is finding alternative materials to fabricate a‘millivolt switch’,which is at least as fast as silicon counterparts and generates much less heat.
Editorial for the Special Issue on the Latest Advancements in Semiconductor Materials, Devices and Systems

Xinghuan Chen,Fangzhou Wang,Zirui Wang,Zeheng Wang,Jing-Kai Huang

DOI: https://doi.org/10.3390/mi15121422

IF: 3.4

2024-11-28

Micromachines

Abstract:The field of semiconductor research is experiencing a paradigm shift as the boundaries of Moore's Law are being approached [...]

chemistry, analytical,nanoscience & nanotechnology,instruments & instrumentation,physics, applied
Device Simulation in Nanoelectronic Era

Zhiping Yu

DOI: https://doi.org/10.1109/edssc.2005.1635252

2005-01-01

Abstract:Progress in combining bandstructure calculation and solid-state device simulation is reviewed. Even though the underlying physics in nano-scaled devices has been shifted from classical to quantum mechanisms. the purpose of electronic devices remains the same: to provide switch and amplification for electrical signals. Key features in the next generation of device simulators serving both microelectronics and nanoelectronics are projected.

Nanoelectronics: Materials, Devices and Applications

Nanoelectronic Materials, Devices and Modeling: Current Research Trends

Nanoelectronics, Circuits and Nanoprocessors

Carbon Based Nanoelectronics: Materials and Devices

Computational Electromagnetics for Nanodevices

Nano-semiconductor Materials in Photo-electronic Fields

New device technologies of integrated circuit in post-Moore era

Carbon based electronic technology in post-Moore era: progress, applications and challenges

(Keynote) Technological Challenges and Emerging Device Architectures for Future Semiconductor Micro and Nanoelectronics

Research directions and challenges in nanoelectronics

Advances In Si-Based Nanotechnology And Quantum Devices

Review of Advanced CMOS Technology for Post-Moore Era

On the ESD Protection and Non-Fatal ESD Strike on Nano CMOS Devices

Challenges and Opportunities in Engineering of Next Generation 3D Microelectronic Devices: Improved Performance, Higher Integration Density

Carbon-based CMOS Integrated Circuit Technology: Development Status and Future Challenges

Advancing in Research of One-dimensional Silicon Nano-materials

Electronics Based on Two-Dimensional Materials: Status and Outlook

The Status and Trend of Novel Process and Technology in Nano-Ic Manufacturing

The Road to Chirality-Specific Growth of Single-Walled Carbon Nanotubes

Editorial for the Special Issue on the Latest Advancements in Semiconductor Materials, Devices and Systems

Device Simulation in Nanoelectronic Era