Abstract:It is well-known that both Performance and reliability of present-day RF integrated circuits (RFICs & MMICs) and even Nano electronic devices cannot be completely understood or accurately predicted from electromagnetic considerations alone. For example, the performance parameters, such as S-parameters, power handling capability and breakdown thresholds of high-density nano interconnects and RF modules are often affected by heat conduction and mechanical stresses/deformations, in extreme cases leading to electro-thermo-mechanical breakdown. Under such circumstances, predictive simulations must rely on multiphysics computational approaches as opposed to electromagnetics-only methods. There exist many challenges in developing computational algorithms for rapidly and accurately analyzing electro-thermal and electro-thermo-mechanical phenomena in RF as well as nano electronic components and circuits with complex geometries and new material properties. Most material parameters involved, such as carrier mobility, permittivity, permeability, electrical conductivity, thermal conductivity, and thermal expansion coefficients are applied field, temperature, and thermal stress dependent. On the other hand, there exist significant differences in length and time scales among electrical, thermal, and mechanical field actions. Therefore, special attention must be paid to the choice of spatial discretization and time stepping procedures to ensure convergent multiphysics solutions. This talk will address challenges and opportunities in computational multiphysics method and its application for RF and Nano electronics, with a series of examples given and demonstrated for the capability of time-domain finite element method and its implementation.

Device Simulation in Nanoelectronic Era

Simulation of P-N Junction Properties of Nanowires and Nanowire Arrays

Modeling and Simulation of Nano-devices

Computational Multiphysics Method for Rf and Nano Electronics: Challenges and Opportunities

Numerical Simulations Of Nonlinear Current-Voltage Characteristics Of Nano-Channels: A Benchmark Study

Computational Electromagnetics for Nanodevices

Device Simulation of Nano-Scale MOSFETs Based on Bandstructure Calculation

Nanoelectronics, Circuits and Nanoprocessors

Testing And Design Of Nano Electromechanical Structure

Investigation of Interface Effect of Nanoscale Devices

TCAD Simulation of Novel Semiconductor Devices

Nanoelectronic Materials, Devices and Modeling: Current Research Trends

Nanoelectronic Device Simulation Using Extended Hückel Theory (EHT) and NEGF

Advancing in Research of One-dimensional Silicon Nano-materials

Adaptive Simulation for Single-Electron Devices

Advances In Si-Based Nanotechnology And Quantum Devices

Synaptic Devices Based on Semiconductor Nanocrystals

Nano-Sim: A Step Wise Equivalent Conductance based Statistical Simulator for Nanotechnology Circuit Design

Simulation and Modeling of Novel Electronic Device Architectures with NESS (Nano-Electronic Simulation Software): A Modular Nano TCAD Simulation Framework

A web-based platform for nanoscale non-classical device modeling and circuit performance simulation

Nano Electrical Devices and Integration