Enhanced Photocurrent and Suppressed Dark Current of MXene/Ge Heterostructure-Based Near-Infrared Photodetectors Enabled by Surface Charge Transfer Induced Inversion Layer

Chao Xie,Yu Cheng,Shisi Liu,Shijie Xu,Xisheng Cui,Liangpan Yang,Wenhua Yang,Zhixiang Huang

DOI: https://doi.org/10.1109/ted.2024.3480891

IF: 3.1

2024-01-01

IEEE Transactions on Electron Devices

Abstract:2-D MXene/narrow-gap material heterostructures represent a class of hopeful platforms for highly efficient and low-budget near-infrared (NIR) photodetection. Nonetheless, performance improvement is astricted by the comparatively low junction barrier height due to minor work function discrepancy between two components. In this work, a surface inversion layer is introduced between 2-D MXene film and n-Ge substrate exploiting a surface charge transfer doping technique. The coating of MoO3 layer with a high work function induces spontaneous electron extraction from n-Ge toward MoO3 layer. The charge transfer produces a p-type inversion layer on n-Ge surface, which markedly enhances built-in electric field and restrains photocarrier recombination. As a consequent, the optoelectronic performance of a 2-D MXene/Ge heterostructure-based NIR light detector is greatly improved. Specifically, the responsivity and specific detectivity are enhanced from 370.9 mA W-1 and 2.22 x 10(11) Jones to 702.5 mA W-1 and 1.17 x 10(12) Jones, respectively, upon 1550-nm light illumination at self-driven working mode. Around one order of magnitude suppression in dark current is observed. In addition, the detector exhibits quick response speed of 25.2/31.8 mu s and robust operational durability as well. The present study provides a hopeful scheme for further improving the property of 2-D material/semiconductor heterostructure-based photoelectronic devices.