ZnO-based Artificial Synaptic Diodes with Zero-Read Voltage for Neural Network Computing

Ruqi Yang,Titao Li,Dunan Hu,Qiujiang Chen,Bin Lu,Feng Huang,Zhizhen Ye,Jianguo Lu
DOI: https://doi.org/10.1063/5.0231484
IF: 4
2024-01-01
Applied Physics Letters
Abstract:Brain-inspired neuromorphic sensory devices play a crucial role in addressing the limitations of von Neumann systems in contemporary computing. Currently, synaptic devices rely on memristors and thin-film transistors, requiring the establishment of a read voltage. A built-in electric field exists within the p-n junction, enabling the operation of zero-read-voltage synaptic devices. In this study, we propose an artificial synapse utilizing a ZnO diode. Typical rectification curves characterize the formation of ZnO diodes. ZnO diodes demonstrate distinct synaptic properties, including paired-pulse facilitation, paired-pulse depression, long-term potentiation, and long-term depression modulations, with a read voltage of 0 V. An artificial neural network is constructed to simulate recognition tasks using MNIST and Fashion-MNIST databases, achieving test accuracy values of 92.36% and 76.71%, respectively. This research will pave the way for advancing zero-read-voltage artificial synaptic diodes for neural network computing.
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