Abstract:An electrospun ZnO nanofiber‐based transistor with tunable plasticity is fabricated by changing the technological parameters and the underlying mechanism of influence of carrier concentration and mobility on the device is revealed. Ultralow energy consumption and handwritten recognition application with high accuracy are realized in the perovskite‐doped devices to lay the foundation for next‐generation neuromorphic networks. Biological synapses are the operational connection of the neurons for signal transmission in neuromorphic networks and hardware implementation combined with electrospun 1D nanofibers have realized its functionality for complicated computing tasks in basic three‐terminal field‐effect transistors with gate‐controlled channel conductance. However, it still lacks the fundamental understanding that how the technological parameters influence the signal intensity of the information processing in the neural systems for the nanofiber‐based synaptic transistors. Here, by tuning the electrospinning parameters and introducing the channel surface doping, an electrospun ZnO nanofiber‐based transistor with tunable plasticity is presented to emulate the changing synaptic functions. The underlying mechanism of influence of carrier concentration and mobility on the device's electrical and synaptic performance is revealed as well. Short‐term plasticity behaviors including paired‐pulse facilitation, spike duration‐dependent plasticity, and dynamic filtering are tuned in this fiber‐based device. Furthermore, Perovskite‐doped devices with ultralow energy consumption down to ≈0.2554 fJ and their handwritten recognition application show the great potential of synaptic transistors based on a 1D nanostructure active layer for building next‐generation neuromorphic networks.

A Low-Cost Flexible Optoelectronic Synapse Based on ZnO Nanowires for Neuromorphic Computing

Carbon Nanotube-Based Flexible Ferroelectric Synaptic Transistors for Neuromorphic Computing

ZnO nanowire optoelectronic synapse for neuromorphic computing

ZnO photoconductive synaptic devices for neuromorphic computing

Flexible electronic synapse enabled by ferroelectric field effect transistor for robust neuromorphic computing

Optically Stimulated Synaptic Devices Based on the Hybrid Structure of Silicon Nanomembrane and Perovskite.

Nanostructured CuAlO2@ZnO Optoelectronic Device for Artificial Synaptic Applications

Flexible Organic Optoelectronic Devices for Neuromorphic Computing

Flexible transparent InZnO synapse transistor based on Li1.3Al0.3Ti0.7(PO4)3/polyvinyl pyrrolidone nanocomposites electrolyte film for neuromorphic computing

Tailoring Neuroplasticity in Flexible Perovskite QDs-based Optoelectronic Synaptic Transistors by Dual Modes Modulation

Multifunctional Two-Terminal Optoelectronic Synapse Based on Zinc Oxide/Poly(3-hexylthiophene) Heterojunction for Neuromorphic Computing

Flexible ZnO Nanosheet‐Based Artificial Synapses Prepared by Low‐Temperature Process for High Recognition Accuracy Neuromorphic Computing

N:ZnO/MoS 2 -Heterostructured Flexible Synaptic Devices Enabling Optoelectronic Co-Modulation for Robust Artificial Visual Systems

Flexible light-stimulated artificial synapse based on detached (In,Ga)N thin film for neuromorphic computing

An Artificial Optoelectronic Synapse Based on MoOxfilm.

N:ZnO/MoS2-heterostructured flexible synaptic devices enabling optoelectronic co-modulation for robust artificial visual systems

Optoelectronic synaptic device based on ZnO/HfO<sub>x</sub> heterojunction for high-performance neuromorphic vision system

High photosensitivity light-controlled planar ZnO artificial synapse for neuromorphic computing

Ultra-low power IGZO optoelectronic synaptic transistors for neuromorphic computing

Optoelectronic synaptic device based on ZnO/HfOx heterojunction for high-performance neuromorphic vision system

Electrospun Nanofiber‐Based Synaptic Transistor with Tunable Plasticity for Neuromorphic Computing