Abstract:Top Row: (d) TEM micrograph of the TaOx‐based ReRAM element with the TiN electrodes, TaOx switching and Ta oxygen exchange layer. (e) EDX 2D scan of ReRAM stack and V0 layer. Bottom Plots: Measured and the predicted I–V curves of the TaOx memristor device for various NMOS gate voltages (Vg) and electrical conductivity of conducting filament. Memristors, non‐volatile switching memory platform, has recently attracted significant interest, offering unique potential to enable the realization of human brain‐like neuromorphic computing efficiency. Memristors also demonstrate excellent temperature tolerance, long‐term durability, and high tunability with nanosecond pulses, making them highly attractive for neuromorphic computing applications. To better understand the material processing, microstructure, and property relationship of switching mechanisms in memristor devices, computational methodologies, and tools are developed to predict the I–V characteristics of memristor devices based on tantalum oxide (TaOx) resistive random‐access memory (ReRAM) integrated with an n‐channel metal–oxide–semiconductor (NMOS) transistor. A multiphysics model based on coupled partial differential equations for electrical and thermal transport phenomena is solved for the high‐ and low‐resistance states during the formation, growth, and destruction of a conducting filament through SET and RESET stages. These stages effectively represent the migration of oxygen vacancies within an oxide exchange layer. A series of parametric studies and energy minimization calculations are conducted to determine probable ranges for key material and model parameters accounting for the experimental data. The computational model successfully predicted the measured I–V curves across various gate voltages applied to the NMOS transistor in the one transistor one resistance (1T1R) configuration.

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