Abstract:In the era of big data, the demand for data storage and processing is increasing because of advanced technologies such as artificial intelligence (AI), 5G, and cloud computing. Emerging non-volatile memory materials and devices present remarkable opportunities to enhance computing capacity. Concurrently, the AI-driven scientific research paradigm introduces a new mode for improving device performance. This review focuses on recent advances in phase-change memory materials and devices, emphasizing computational- and data-driven methodologies. Phase-change materials (PCMs) operate based on rapid and reversible phase transitions between amorphous and crystalline states, where differences in electrical and optical properties are used to encode digital information. These materials typically consist of multi- component alloys, with phase transitions involving melting, quenching, crystallization, glass relaxation, and crystal- crystal structural changes. To achieve a detailed atomistic understanding of PCMs, largescale density functional theory (DFT) and DFT-based ab initio molecular dynamics (AIMD) simulations are essential. Comparisons between DFT/AIMD simulations and experimental results have clarified many fundamental aspects of PCM. The first part of this review provides an overview of the history and progress in large-scale ab initio simulations of PCMs. With atomic-scale knowledge, rational materials design becomes feasible. The second part explores methods for developing new PCMs with specific properties, such as accelerating crystallization at elevated temperatures while maintaining non-volatile characteristics at room temperature. High-throughput screening's role in discovering new phase change alloys is also discussed. In the third part, we examine multiscale and cross-scale simulations of PCM for various optical and electronic phase change applications. By computing the dielectric functions of PCM during the amorphous- to- crystalline transition, we can track changes in the refractive index and extinction coefficient across visible and infrared spectra over time. These DFT-computed parameters inform coarse-grained device simulations using finite-difference time-domain (FDTD) or finite element method (FEM). Based on these multiscale simulations, we offer optimization guidelines for non-volatile color display and photonic waveguide devices. The machine learning potentials address some performance gaps between the DFT/AIMD and FEM/FDTD calculations. Machine-learning-driven molecular dynamics (MLMD) simulations serve as cross-scale simulations, with recent developments including neural networks, graph convolutional neural networks, and Gaussian approximation potentials. We discuss the role of MLMD in enabling device-scale atomistic simulations, facilitating device design and optimization with atomic-scale information. Finally, we outline future opportunities and challenges in theoretical PCM research. With ongoing AI-driven fundamental research, we anticipate the commercialization of high-performance phase change memory, neuroinspired computing, and reconfigurable nanophotonic devices, which will, in turn, foster the development of more advanced theoretical tools for research.

Multiscale Simulations of Amorphous and Crystalline AgSnSe2 Alloy for Reconfigurable Nanophotonic Applications

Multiscale Simulations of Growth-Dominated Sb2Te Phase-Change Material for Non-Volatile Photonic Applications

Multiscale simulations of growth-dominated Sb$_2$Te phase-change material for non-volatile photonic applications

First-principles Investigation of Amorphous Ge-Sb-Se-Te Optical Phase-Change Materials

“All-Crystalline” Phase Transition in Nonmetal Doped Germanium–antimony–tellurium Films for High-Temperature Non-Volatile Photonic Applications

Unraveling the optical contrast in Sb2Te and AgInSbTe phase-change materials

Change in Structure of Amorphous Sb–Te Phase‐Change Materials as a Function of Stoichiometry

Progress on Materials Design and Multiscale Simulations for Phase-Change Memory

Optical Properties and Local Structure Evolution During Crystallization of Ga16Sb84 Alloy

Bonding Nature and Optical Properties of As 2 Te 3 Phase‐change Material

Terahertz Nanoimaging and Nanospectroscopy of Chalcogenide Phase-Change Materials

Materials Screening for Disorder‐Controlled Chalcogenide Crystals for Phase‐Change Memory Applications

Nanomechanical morphology of amorphous, transition, and crystalline domains in phase change memory thin films

Time-dependent Density-Functional Theory Molecular-Dynamics Study on Amorphization of Sc-Sb-Te Alloy under Optical Excitation

A scheme for simulating multi-level phase change photonics materials

Strong Electron-Polarized Atom Chain in Amorphous Phase-Change Memory GeSbTe Alloy

Thickness-Dependent Crystallization of Ultrathin Antimony Thin Films for Monatomic Multilevel Reflectance and Phase Change Memory Designs

Ab Initio Investigation of Amorphous and Crystalline Arsenic Sesqui‐Chalcogenides: Optical Properties Explained by Metavalent Bonding

Probing the Melting Transitions in Phase-Change Superlattices via Thin Film Nanocalorimetry

Characterizations of electronic and optical properties of Sb-based phase-change material stabilized by alloying Cr

Designing Crystallization in Phase-Change Materials for Universal Memory and Neuro-Inspired Computing