Abstract:Solution-processed high-kappa gate dielectrics, such as Al2O3 and HfO2, show great potential for use in low-cost electronics. However, high-temperature treatments are generally needed to cure the film, limiting the use in flexible electronics. Here we use anodization, a simple, low-cost, solution-based method, to form thin, conformal, high quality HfOx layers at room temperature. Several anodization voltages were studied, and the relative quantity of Hf-O bonding was found to increase by 10% when increasing anodization voltage from 2 to 3 V, while maintaining almost the same when further increasing the anodization voltage. Conduction mechanisms were analyzed, showing that Schottky emission dominates even for the thinnest oxides. HfOx layers formed by anodization voltages of 2, 3, and 4 V show high capacitance density of 1290, 1160, and 1060 nF/cm(2), which are equivalent to 2.68, 2.97, and 3.26 nm of thermally grown SiO2. Using such high capacitance density insulators, we fabricated InGaZnO (IGZO) thin-film transistors (TFTs) at room temperature, showing a low operating voltage of 0.5 V, one of the lowest for oxide-semiconductor-based TFTs. TFTs gated with HfOx anodized at the optimal voltage, 3 V, show a high current on/off ratio of >10(5), a mobility approaching 10 cm(2)/(V s), and a subthreshold swing as low as 69 mV/dec, close to the theoretical limit at 300 K. The interface trap density was found to be highly related to the quality of the HfOx film, showing a 50% decrease with the increase of anodization voltage from 2 to 3 V. The devices show negligible change after storage in air for 6 months and favorable stability under both positive and negative gate bias stress. Finally, we demonstrate TFTs on plastic substrates, maintaining high quality performance even under a bending radius of 9 mm. As a result, such devices have potential applications in low-cost, low-voltage-operation, low-power electronics.

Atomic Layer Deposited ZnO Negative Capacitance Thin-Film Transistors with Hf0.5Zr0.5O2-Based Ferroelectric Gates

Hf$_{\text{0.5}}$Zr$_{\text{0.5}}$O$_{\text{2}}$-Based Ferroelectric Gate AlGaN/GaN HEMTs With Steep Subthreshold Swings

Hf0.5Zr0.5O2-Based Ferroelectric Gate AlGaN/GaN HEMTs with Steep Subthreshold Swings

Compatibility of HfN Metal Gate Electrodes with Hf 0.5 Zr 0.5 O 2 Ferroelectric Thin Films for Ferroelectric Field-Effect Transistors

Solution-Processed HfOx for Half-Volt Operation of InGaZnO Thin-Film Transistors

Excellent Ferroelectric Properties of Hf0.5Zr0.5O2 Thin Films Induced by Al2O3 Dielectric Layer

Performance Improvement of Hf0.5Zr0.5O2 Based Ferroelectric-Field-Effect Transistors with ZrO2 seed layers

High Mobility Thin-Film Transistor with Solution-Processed Hafnium-Oxide Dielectric and Zinc-Indium-Tin-Oxide Semiconductor

Ultralow Subthreshold Swing of a MOSFET Caused by Ferroelectric Polarization Reversal of Hf0.5Zr0.5O2 Thin Films.

Optimization of Subthreshold Swing and Hysteresis in Hf 0.5 Zr 0.5 O 2 -Based MoS 2 Negative Capacitance Field-Effect Transistors by Modulating Capacitance Matching

Atomic Layer Deposition Deposited High Dielectric Constant (κ) ZrAlOx Gate Insulator Enabling High Performance ZnSnO Thin Film Transistors

Performance Improvement of Hf0.5Zr0.5O2-Based Ferroelectric-Field-Effect Transistors with ZrO2 Seed Layers

Ferroelectricity of pristine Hf<sub>0.5</sub>Zr<sub>0.5</sub>O<sub>2</sub> films fabricated by atomic layer deposition

Improved Subthreshold Swing of MoS2 Negative-Capacitance Transistor by Fluorine-Plasma Treatment on Ferroelectric Hf0.5Zr0.5O2 Gate Dielectric

Solution-Processed High Performance Hizo Thin Film Transistor with Azo Gate Dielectric

Direct growth of orthorhombic Hf0.5Zr0.5O2 thin films for hysteresis-free MoS2 negative capacitance field-effect transistors

High Performance Aluminum-Doped Zno Thin Film Transistors with High-K Gate Dielectrics Fabricated at Low Temperature

Low-Temperature Solution-Processed HfZrO Gate Insulator for High-Performance of Flexible LaZnO Thin-Film Transistor

High Performance Top-Gated Ferroelectric Field Effect Transistors Based on Two-Dimensional ZnO Nanosheets

Heteroepitaxy of Hf<sub>0.5</sub>Zr<sub>0.5</sub>O<sub>2 </sub>ferroelectric gate layer on AlGaN/GaN towards normally-off HEMTs

Ultrathin ferroic HfO2–ZrO2 superlattice gate stack for advanced transistors