Abstract:In situ investigation of chemical vapor deposition (CVD) is of critical importance to understanding growth mechanisms of transition-metal dichalcogenides (TMDs) and to develop technologies for growing high-quality monolayer single crystals. However, the in situ investigation is still a great challenge in practice, because TMD CVD growth is conducted at a high temperature with a reduction environment. In this work, we developed an in situ investigation system for CVD growth and presented real-time observations of monolayer MoS2 deposition on the SiO2/Si substrate. We discovered that monolayer MoS2 should be grown via the vapor-state precursor reaction and crystallized from the prenucleation sites on a substrate, an intermediate-phase MoO2 was essential for the nucleation seeding, but the population density should be controlled, and a high-concentration S vapor promoted the in-plane epitaxial growth of MoS2; hence, it was of great benefit to obtain a high-quality monolayer with a compact shape.The Supporting Information is available free of charge at https://pubs.acs.org/doi/10.1021/acsaelm.0c00231.Figure S1. Schematic representation of MoS2 CVD growth in a microfurnace; Figure S2. Sulfurization process of 2D MoO3 flakes with the thickness of 6 nm; Figure S3. Raman characterization of monolayer MoS2 grown via two modes; Figure S4. Characterization of the MoO2 film sulfurized by the high-temperature S vapor; Figure S5. High-quality monolayer MoS2 growth using the microfurnace under in situ observations (PDF)Movie S1. MoO3 sublimation (MPG)Movie S2. In situ observation of MoS2 growth (MPG)Movie S3. In situ observation of MoO2 deposition (MPG)Movie S4. Monolayer MoS2 growth vs MoO2 deposition (MPG)Movie S5. Monolayer MoS2 growth and roughing (MPG)This article has not yet been cited by other publications.

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