Abstract:Epitaxial semiconductor-superconductor (SM-SC) hybrid nanowires are potential candidates for implementing Majorana qubits. Recent experimental and theoretical works show that charged impurities in SM remain a major problem in all existing hybrid nanowires, in which the SM is either InAs or InSb while the SC is mainly Al. Here, we theoretically validate the recently proposed PbTe-Pb hybrid nanowire as a potential candidate for Majorana devices. By studying the electrostatic and electronic properties of PbTe nanowires, we demonstrate that the huge dielectric constant of PbTe endows itself a high tolerance of charged impurity, which is a potential advantage over InAs and InSb nanowires. Moreover, we find that the effective axial Landé g factor and Rashba spin-orbit coupling strength of PbTe nanowires are comparable to those of InAs nanowires. The conceivable merits of using Pb as the SC are (i) Pb has a larger superconducting gap, higher critical temperature, and higher parallel critical magnetic field than those of Al; (ii) a superconducting gap comparable with those of InAs-Al and InSb-Al can be induced in PbTe-Pb even by a weak coupling between Pb and PbTe, which simultaneously relieves the adverse renormalization and induced disorder effects on SM from SC; and (iii) Pb film can be grown on PbTe with a thin buffer CdTe layer in between, solving the lattice mismatch problem as an important source of disorder. In the presence of a parallel magnetic field, we show that the typical BdG energy spectrum and tunneling spectroscopy of PbTe-Pb resemble those of InAs and InSb based hybrid nanowires exposed to a tilting magnetic field, as a result of the highly anisotropic Landé g factors of PbTe nanowires. The calculated topological phase diagrams of PbTe-Pb indicate that the multivalley character of PbTe makes it easier than InAs and InSb to access topological superconducting phases. Our results could facilitate the experimental realization of PbTe-Pb hybrid nanowires and inspire further theoretical works.

First Principles Assessment of ZnTe and CdSe as Prospective Tunnel Barriers at the InAs/Al Interface

First Principles Assessment of ZnTe and CdSe as Prospective Tunnel Barriers at the InAs/Al Interface

First Principles Assessment of CdTe as a Tunnel Barrier at the $\mathbfα$-Sn/InSb Interface

InSb Nanowires with Built-In GaxIn1-xSb Tunnel Barriers for Majorana Devices

Numerical study of PbTe-Pb hybrid nanowires for engineering Majorana zero modes

First-principles studies of Schottky barriers and tunneling properties at Al(111)/Si(111) and CoSi$_2$(111)/Si(111) interfaces

Time-Reversal Symmetry Protected Chiral Interface States Between Quantum Spin And Quantum Anomalous Hall Insulators

Alleviation of Schottky barrier heights at TMDs/metal interfaces with a tunneling layer of semiconducting InSe nanoflake

Interface Dependent Coexistence of Two‐Dimensional Electron and Hole Gases in Mn‐doped InAs/GaSb

Ab initio study of Proximity-Induced Superconductivity in PbTe/Pb heterostructures

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Energy Barrier at Indium/Indium Selenide Nanosheet Interfaces: Implications of Metal-to-Insulator Transition for Field-Effect Transistor Modeling

Gate Modulation of Anisotropic Superconductivity in Al–Dirac Semimetal Cd3As2 Nanoplate–al Josephson Junctions

Van der Waals Schottky barriers as interface probes of the correlation between chemical potential shifts and charge density wave formation in 1T-TiSe$_2$ and 2H-NbSe$_2$

Majorana-like Coulomb spectroscopy in the absence of zero bias peaks

Zeeman Tunability of Andreev Bound States in van der Waals Tunnel Barriers

Monolayer superconductivity and tunable topological electronic structure at the Fe(Te,Se)/Bi2Te3 interface

The emergence of interface states in graphene/transition metal dichalcogenides heterostructure with lateral interface

Transport Studies of Epi-Al/InAs Two-Dimensional Electron Gas Systems for Required Building-Blocks in Topological Superconductor Networks

Quantum constriction at the interface between a superconducting nanocrystal and an electron accumulation layer

Revealing the Weak Fermi Level Pinning Effect of 2D Semiconductor/2d Metal Contact: A Case of Monolayer In2Ge2Te6 and Its Janus Structure In2Ge2Te3Se3