Unraveling the Relationship Between the Phenethylammonium-Induced 2D Phase on the Perovskite Surface and Inverted Wide Bandgap Perovskite Solar Cell Performance

Xiaomin Huo,Silvia Mariotti,Yaoyao Li,Ting Guo,Chenfeng Ding,Penghui Ji,Shuai Yuan,Tongtong Li,Ning Meng,Xiaomin Liu,Jiahao Zhang,Ilhem Nadia Rabehi,Yu Zhang,Suling Zhao,Hengyuan Wang,Dandan Song,Luis K. Ono,Zheng Xu,Yabing Qi
DOI: https://doi.org/10.1039/d4ee02133a
IF: 32.5
2024-01-01
Energy & Environmental Science
Abstract:Two- and three-dimensional (2D/3D) heterojunctions have been widely used to improve the performance of n-type/intrinsic/p-type (NIP) structured perovskite solar cells (PSCs). However, the electron blocking nature of the 2D ligands, such as phenethylammonium (PEA+), on the perovskite surface is not conducive to PSCs with a p-type/intrinsic/n-type (PIN) structure. In this work, we improve the device performance by eliminating the 2D phase on the perovskite surface through the subsequent annealing process. After eliminating the 2D phase, a dipole layer forms with the remaining PEA+, resulting in an excellent energy level alignment between the perovskite and electron transport layer. As a result, the solar cells with the PIN structure using a 1.67 eV wide-bandgap triple-cation perovskite show an enhanced power conversion efficiency of 20.61% with a short circuit current density of 20.05 mA cm-2 and a fill factor of 81.57%. Furthermore, the open-circuit voltage (VOC) is improved from 1.20 V to 1.26 V, yielding a VOC deficit of 410 mV, which represents one of the lowest values among the PIN structured wide-bandgap PSCs. We studied the impact of phenethylammonium chloride on PIN-structured wide bandgap perovskite solar cells. Elimination of the 2D phase results in a champion efficiency of 20.61% and a VOC loss of only 410 mV with hysteresis-free J-V curves.
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