High Piezoelectricity and Thermal Stability of Ce-doped CaBi2Nb2O9-based High-Temperature Ceramics

Tao Lin,Wen-Ying Fan,Chuan-Yang Tao,Jun Ma,Bin-Jie Chen,Zhong-Shang Dou,Bing-Lin Shen,Min Ju,Jing-Tong Lu,Mei-Peng Zhong,Yu-Qing Zhou,Mao-Hua Zhang,Wen Gong,Fang-Zhou Yao,Ke Wang
DOI: https://doi.org/10.1016/j.jeurceramsoc.2024.116955
IF: 5.7
2025-01-01
Journal of the European Ceramic Society
Abstract:As the industry advances at a swift pace, the demand for piezoelectric materials that exhibit both exceptional piezoelectric properties and excellent thermal stability is on the rise. However, it remains a significant challenge to achieve a balance between high piezoelectricity and thermal stability in these materials. In this study, the phase structure, microstructure, and thermal stability of Ce-doped CaBi2Nb2O9 (CLBBN-xCe) high-temperature bismuth layer-structured piezoceramics are studied. It is revealed that the CLBBN-0.1Ce ceramics stand out with a piezoelectric coefficient d33 of 21.7 pC/N and a high Curie temperature of 907 degrees C. Furthermore, in situ temperature measurement demonstrates that the d33 has a change rate of 20.8 % from room temperature to 400 degrees C. We found that grain size refinement and domain morphology contribute to excellent electrical properties of the Ce-doped CaBi2Nb2O9-based ceramics. The superior performance of these ceramics suggests they hold great promise for high-temperature applications.
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