Simulation Research on Wafer-Level Electrochemical Deposition Uniformity

Zishan Xiong,Shichen Xie,K. N. Tu,Yingxia Liu
DOI: https://doi.org/10.1109/icept63120.2024.10668495
2024-01-01
Abstract:With the slowing down of Moore's Law, the continued improvement of integration density has become increasingly challenging for traditional integrated circuits. 3D packaging technology offers a solution by overcoming the limitations of semiconductor processes. In this technology, interconnections between chips and substrates are achieved through Through-Silicon Vias (TSVs) and microbumps, which are fabricated using electroplating. However, this process faces issues related to the thickness of the electroplated layer. Larger wafer sizes can cause uneven current density distribution, leading to inconsistent thickness in the electroplated layer. This study focuses on the deposition process for large wafers, employing finite element analysis methods to investigate the issue. The results showed that after one hour, the thickness of the plating layer at the edge was $10\ \mu \mathrm{m}$ , while the thickness at the center was $9.4\ \mu \mathrm{m}$ . These findings offer insights into improving process control for wafer-level electroplating.
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