IGCT Selection Method in Hybrid DC Circuit Breakers Based on TCAD Simulation

Ziyue Yang,Jiahao Guo,Mingming Shi,Ruike Zhang,Yifei Wu,Yi Wu,Jianzhen Zhang

DOI: https://doi.org/10.1109/icet61945.2024.10672706

2024-01-01

Abstract:In the development of DC grids, IGCTs have garnered attention for their low conduction losses, high voltage levels, and strong surge current resistance, becoming a new research focus. In practical applications, IGCTs often suffer thermal failures due to junction temperatures exceeding the normal operating range, making junction temperature and loss important criteria for IGCT selection in hybrid DC circuit breakers. This paper proposes an IGCT selection method using TCAD simulation, establishing and calibrating models for three typical IGCTs of the same voltage level, including Asymmetric IGCT, Reverse Blocking IGCT, and Reverse Conducting IGCT, based on Sentaurus TCAD. By applying the model to a specific DC circuit breaker topology and exploring its conduction and turn off thermal characteristics, the junction temperature and loss of IGCT under this operating condition can be calculated, providing guidance for device selection.