Enhanced Fourfold Anisotropic Magnetoresistance in FeRh Films Through Mn Doping

Xiaojuan Yuan,Zhenhua Zhang,Rongxin Li,Qifeng Li,Hengguo Lai,Yanrong Song,Fangqi Liu,Yong Liu,Zhihong Lu,Rui Xiong

DOI: https://doi.org/10.1016/j.jallcom.2024.176330

IF: 6.2

2024-01-01

Journal of Alloys and Compounds

Abstract:Anisotropic magnetoresistance (AMR) in magnetic materials is a fundamental magnetoelectric phenomenon with applications in spintronics. This study investigates AMR in FeRh and Fe0.9Mn0.1Rh alloy films. During the ferromagnetic- antiferromagnetic phase transition in pure FeRh, domain wall scattering leads to a pronounced fourfold AMR. This fourfold AMR is a unique occurrence in certain materials where the resistance varies with an angular dependence on the applied magnetic field and the direction of electrical current, exhibiting a 90-degree periodicity as opposed to the typical 180-degree periodicity observed in twofold AMR. Similarly, when 10% of the Fe is replaced by Mn in FeRh (yielding Fe0.9Mn0.1Rh), the alloy undergoes a phase transition from ferromagnetism to ferrimagnetism. Notably, the Fe0.9Mn0.1Rh alloy exhibits more pronounced fourfold AMR during this phase transition. The enhancement of the fourfold AMR by domain wall scattering during the phase transition is a crucial factor. The magnitude of the fourfold AMR can be altered by modifying these domains with a magnetic field. Interestingly, the Fe0.875Mn0.125Rh exhibits a considerable fourfold AMR even in the ferromagnetic state, attributed to the modified electronic band structure induced by Mn doping. First-principles calculations confirm this intrinsic origin. Importantly, at low temperatures after the phase transition, the magnetic field can greatly control the fourfold AMR. These findings provide insights into the manipulation of AMR in magnetic materials and the potential applications of fourfold AMR in spintronics.