Intrinsic mechanism for anisotropic magnetoresistance and experimental confirmation in Co$_x$Fe$_{1-x}$ single-crystal films

F. L. Zeng,Z. Y. Ren,Y. Li,J. Y. Zeng,M. W. Jia,J. Miao,A. Hoffmann,W. Zhang,Y. Z. Wu,Z. Yuan
DOI: https://doi.org/10.48550/arXiv.2008.00872
2020-08-03
Materials Science
Abstract:Using first-principles transport calculations, we predict that the anisotropic magnetoresistance (AMR) of single-crystal Co$_x$Fe$_{1-x}$ alloys is strongly dependent on the current orientation and alloy concentration. An intrinsic mechanism for AMR is found to arise from the band crossing due to magnetization-dependent symmetry protection. These special $k$-points can be shifted towards or away from the Fermi energy by varying the alloy composition and hence the exchange splitting, thus allowing AMR tunability. The prediction is confirmed by delicate transport measurements, which further reveal a reciprocal relationship of the longitudinal and transverse resistivities along different crystal axes.
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