Enhancing antiferromagnetic anisotropic magnetoresistance by substitutional doping

Xiaojuan Yuan,Zhenhua Zhang,Rongxin Li,Qifeng Li,Hengguo Lai,Yanrong Song,Yong Liu,Zihan Xu,Zhihong Lu,Rui Xiong,Wenbing Zhang
DOI: https://doi.org/10.1103/physrevapplied.21.054045
IF: 4.6
2024-05-23
Physical Review Applied
Abstract:The study of the anisotropic magnetoresistance (AMR) in antiferromagnetic materials is essential due to their superior properties, which have led to a broader application of antiferromagnets in spintronic devices. In this work, we examine the impact of substitutional doping on the antiferromagnetic AMR of FeRh . We discover that Pt - Rh substitution can markedly enhance the antiferromagnetic AMR of FeRh . With a 7.7% Pt - Rh substitution, the AMR increases up to fivefold compared to that of pristine FeRh films. Conversely, Mn - Fe substitution results in a decrease in the antiferromagnetic AMR of FeRh . First-principles calculations are employed to comprehend the distinct effects of the substitution on the electronic band structures. Compared to the Mn - Fe substitution, the Pt - Rh substitution leads to a greater difference in electrical transport between parallel and perpendicular orientations, culminating in a larger AMR. This is because the replacement with Pt - Rh increases the spin-orbit coupling interaction and s-d scattering in the system, whereas the substitution with Mn - Fe reduces the spin-orbit coupling. Our research offers valuable insights into the underlying mechanisms controlling the AMR in antiferromagnetic materials and establishes a foundation for further enhancing their functionality. https://doi.org/10.1103/PhysRevApplied.21.054045 © 2024 American Physical Society
physics, applied
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