Abstract:Internet of Things applications, including medical diagnostics, imaging and industrial process controls, pollution monitoring or real-time motion control, push the extension of the Si photonics towards mid-infrared range. In recent years, group IV SiGeSn-based optoelectronic devices including light emitting, detectors, modulators, and CMOS devices have been developed. The main advantage of SiGeSn is the bandgap tunability in the range between 1.5 to 5 μm via Si and Sn compositions. Remarkably, the GeSn binary alloy becomes a direct bandgap semiconductor at a relative low Sn content of about 7-8 at.% opening the quest for the realization of monolithically integrated laser sources on Si. In this direction, from the first laser emission proof in 2015 remarkable progress has been done. Supported by epitaxial growth success, processing technology, and cavity design, the laser emission of optically pumped was continuously increased from 80K to 270K. The main role here was played by increasing the Sn content up a concentration of 17 at.%. The next major improvement came from layer transfer technology allowing defect engineering and heat management. Their combination made possible room temperature lasing. However, the real life application requires low laser threshold. Here the use of multiple quantum wells based on SiGeSn/GeSn heterostructures and strain engineering allow a remarkable threshold reduction to values of about 1 kA/cm 2 . Interestingly, modeling shows that the very epitaxial challenging of having high Sn contents can be reduced by band structure engineering via introducing tensile strain and, in addition, larger gains are possible compared with high-Sn strain free layers. The optical laser spectrum at 0 °C for a GeSn layer under 1 % biaxial tensile strain is shown in Fig 1a. The next step is the realization of an electrical pumped GeSn laser. The first data indicate that both waveguide and microdisk cavities can be electrically pumped leading to low temperature laser emission. The effect of the geometry and strain relaxation of under-etched cavities on the laser emission is under study. Figure 1b shows an exemplary spectrum and current-in light-out (LI) curve for a device with a SiGeSn/GeSn heterostructure taken at 50 K. Figure 1

Optimization of GeSn Nanostructures Via Tuning of Femtosecond Laser Parameters

Control,optimization and Measurement of Parameters of Semiconductor Nanowires Lasers

Strained GeSn laser with multiple fins structure based on SiN stress

Sphere-shaped SiGe micro/nanostructures with tunable Ge composition and size formed by laser irradiation*

Optimization of Laser Recrystallization Process for GeSn Films on Si Substrates Based on Finite Difference Time Domain and Finite Element Method

Simulation and optimization of strained GeSn laser with SiN-induced stress

1D photonic crystal direct bandgap GeSn-on-insulator laser

High‐Precision Wavelength Tuning of GeSn Nanobeam Lasers via Dynamically Controlled Strain Engineering (Adv. Sci. 17/2023)

Growth and Strain Modulation of GeSn Alloys for Photonic and Electronic Applications

Fabrication of highly homogeneous and controllable nanogratings on silicon via chemical etching-assisted femtosecond laser modification

Design of Tensile-Strained GeSn/SiGeSn Structure for Low Threshold Mid-infrared Laser Application

Gesn Alloys: From Optical to Electrical Pumped Lasers

Periodic Surface Nanostructures on Polycrystalline ZnO Induced by Femtosecond Laser Pulses

Fabrication of Sub-Micrometer Periodic Nanostructures Using Pulsed Laser Interference for Efficient Light Trapping in Optoelectronic Devices

Promising Features of Low-Temperature Grown Ge Nanostructures on Si(001) Substrates

Colloidal synthesis, physical properties, and applications of zero- and one-dimensional GeSn nanostructures

The morphological and optical characteristics of femtosecond laser-induced large-area micro/nanostructures on GaAs, Si, and brass.

All‐Around HfO2 Stressor for Tensile Strain in GeSn‐on‐Insulator Nanobeam Lasers

Fabrication of High-Quality and Strain-Relaxed GeSn Microdisks by Integrating Selective Epitaxial Growth and Selective Wet Etching Methods

Ultra-low threshold cw and pulsed lasing in tensile strained GeSn alloys

Mechanism of Nanostructure Processing on Au and Ag Nano-Film by a Nanosecond Laser Illuminating Cantilevered Scanning Near-Field Optical Microscopy Tip