A 3.0-V 4.2-Μa 2.23-Ppm/°c BGR with Cross-connected NPNs and Base-current Compensation

Weidong Xue,Xinwei Yu,Yisen Zhang,Xin Ming,Jian Fang,Junyan Ren
DOI: https://doi.org/10.1016/j.mejo.2024.106354
IF: 1.992
2024-01-01
Microelectronics Journal
Abstract:This paper presents a high-precision, low-power bandgap voltage reference with a 3.0 V output voltage suitable for battery-management systems. Compared to Brokaw's type bandgap references (BGRs), Cross-connected NPN transistors facilitate higher output voltages without the necessity of operational amplifiers and are unaffected by the current-mirror mismatch. Base-current compensation is proposed to address the effect of base current on voltage output temperature characteristics at low power consumption. A piecewise exponential curvature correction stains high-order compensation for the nonlinear characteristic of base-emitter voltage. Experimental results of the proposed BGR implemented in a 0.18-mu m Bipolar-CMOS-DMOS (BCD) process demonstrate that the temperature coefficient is 2.23 ppm/degrees C degrees C over the range of-40 degrees C-120 degrees C. The line regulation is 0.2 mV/V at a 5-6 V supply voltage with a supply current of only 4.2 mu A. The die area of the fabricated BGR is 0.105 mm2. 2 .
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