Effective N-Type De-Doping of Perovskite Surface Via Defect Passivation and Improved Film Crystallization for High-Efficiency Inorganic Solar Cells

Hui Li,Jialong Duan,Naimin Liu,Linzheng Ma,Jie Dou,Xinyu Zhang,Qiyao Guo,Yuanyuan Zhao,Benlin He,Qunwei Tang
DOI: https://doi.org/10.1039/d4ta03811h
IF: 11.9
2024-01-01
Journal of Materials Chemistry A
Abstract:Defects in perovskite films not only challenge the efficiency and stability improvement of perovskite solar cells (PSCs), but also serve as electronic dopants that impact interface energetics and charge-transfer kinetics. To address this issue, herein, we introduced a natural additive into a perovskite precursor to improve the inorganic CsPbI2Br film quality. Arising from the strong interaction between passivation molecules and undercoordinated Pb2+ in the perovskite, the reduction in defects results in effective n-type de-doping of the inorganic CsPbI2Br perovskite surface, concomitantly forming an n/n(-) homojunction at the top perovskite/carbon interface for accelerating charge extraction and suppressing carrier nonradiative recombination in a carbon-based PSC. Consequently, a cutting-edge efficiency as high as 15.0% was achieved with reduced hysteresis in addition to significantly improved long-term stability for a 65 days storage period in the air (94.74% efficiency retention rate) and persistent light irradiation for over 230 hours in N-2 (similar to 82% efficiency retention rate).
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