Sign Reversal of the Hall Effect in the Flux Flow Region of Bi2+xSr2-xCuO6+δ

Qihao Zang,Zuyu Xu,Huiqian Luo,Hua-Bing Wang,Hai-Hu Wen
DOI: https://doi.org/10.1103/physrevb.109.174501
IF: 3.7
2024-01-01
Physical Review B
Abstract:We have measured the longitudinal and transverse resistivity, rho xx and rho xy on the optimally doped Bi2+xSr2-xCuO6+delta single crystals with a well-shaped Hall bar structure. It is found that the Hall resistance in the flux flow region exhibits a clear sign-reversal effect. The strongest reversal Hall signal appears in the region of about the half-transition way, either on the temperature dependence of rho xy at a fixed field or the field dependence of rho xy at a fixed temperature. Detailed analysis shows that the theoretically proposed scaling law rho xy = A rho x beta x with 1.5 < < 2 in the small dissipation limit is not obeyed very well. The Hall resistivity is plotted in a H - T phase diagram, and the boundary for the Hall reversal effect to occur follows the theoretical prediction of Feigel'man et al. [JETP Lett. 62, 834 (1995)], which suggests that the anomalous Hall effect may be induced by the properties of a single vortex, rather than by the collective flux motion with pinning and strong thermal fluctuations.
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