Sign Reversal of the Hall Resistivity in the Electron-Doped La2-xCexCuO4 Thin Films

B. X. Wu,K. Jin,J. Yuan,H. B. Wang,T. Hatano,B. Xu,B. R. Zhao,B. Y. Zhu
DOI: https://doi.org/10.1016/j.physc.2009.10.151
2010-01-01
Abstract:Transport properties including both the longitudinal resistivity ρxx(H) and the Hall resistivity ρxy(H) are systematically studied in the optimally doped La2-xCexCuO4 (x=0.105) thin films. We have found sign reversals of the Hall resistivity ρxy(H) in two different temperature regions, i.e., 15.5–20K and 36.5–38K. In addition, ρxx(H) and ρxy(H) show H2 dependence in the temperature region of 40–50K, which is similar to the behavior of the compensated metal. The abnormal sign evolution in ρxy(H,T) can be attributed to the competition between the two different carriers, i.e., electrons and holes.
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