Abstract:3D packaging has broad applications due to its high integration, lightweight, small package size and low cost. Through silicon vias (TSV) have attracted much attention as the only packaging technology to achieve vertical interconnection. The quality of superior filling by electroplated copper (Cu) determines the reliability of TSV in electronic devices. As one of the most vital additives, levelers are always the confidential part of electrolyte formulations. In general, a nitrogen-containing heterocyclic compound can be employed as a potential leveler for TSV filling, like Janus Green B (JGB). However, the mechanism of the leveler during copper electrodeposition is shrouded in mystery. Whether the nitrogen-nitrogen double bond (-N=N-) or the nitrogen cation (N+) in the JGB molecule take the effect in electroplating is still a hot topic of debate. Here, three levelers with or without -N=N-, containing JGB, phenosafranin (PS) and phenazine methosulfate (PMS), are utilized in the TSV electroplated process to explore the active site of molecules. The filling performance of different levelers were compared. Electrochemical measurements was used to investigate the leveling mechanism. The optical microscope (OM) and ultraviolet spectrophotometer (UV-vis) were used to characterize the filling quality and the change of electrolyte before and after electrodeposition. The results of characterizations confirmed that both -N=N- and N+ play a certain effect in electroplating, the reductive reaction of -N=N- competes with Cu reduction and the electrostatic adsorption of N+ and Cl- enables the deposition inhibition of Cu at salient sites.

Effect of Nitrogen-containing Groups on the Reduction of Copper Ions: in Situ Raman and AIMD

Effect of Sulfate Ions on Anodic Polarization Behavior of Nanocrystalline Copper Bulk

In Situ Loading of Cu2O Active Sites on Island-like Copper for Efficient Electrochemical Reduction of Nitrate to Ammonia.

Structural influence of nitrogen-containing groups on triphenylmethane-based levelers in super-conformal copper electroplating

Computational analysis and experimental evidence of two typical levelers for acid copper electroplating

Investigation on Synthesis and Mechanism of a Sudan Ⅰ Copper Electrodeposition Leveler Based on Influencing Ion Diffusion Strategy

Interface Adhesion Enhancement by Condensed Aromatic Ring Expansion of Naphthalene Imide Derivatives for Microvia Metallization by Copper Electroplating

Effects of Fe(III) and Cu(I) on Electrodeposition and Microstructure Characterization for Acid Plating Bath

Computational and experimental study of a novel L-Cysteine hydrochloride leveler for copper electroplated via fill in redistribution layers

Structure Performance Correlation of N-Heterocyclic Oligomer Leveler for Acid Copper Plating of Advanced Interconnects

Strong Convection-Dependent Adsorption of Phenothiazine Skeleton Levelers and Their Application in Copper Electroplating

Identifying the Active Sites and Intermediates on Copper Surfaces for Electrochemical Nitrate Reduction to Ammonia

Influence of Branched Quaternary Ammonium Surfactant Molecules As Levelers for Copper Electroplating from Acidic Sulfate Bath

Synthesis of coplanar quaternary ammonium salts with excellent electrochemical properties based on an anthraquinone skeleton and their application in copper plating

Copper electroplating of through silicon vias (TSV) using a series of nitrogen-containing heterocyclic compounds

Effects of 2-Mercaptopyridine and Janus Green B As Levelers on Electrical Resistance of Electrodeposited Copper Thin Film for Interconnects

Electrochemical behaviors and influence factors of copper and copper alloys cathode for electrocatalytic nitrate removal

Synthesis and mechanism of quaternary ammonium salts based on porphyrin as high-performance copper levelers

Numerical and Experimental Investigation of 2-Thiazoline-2-thiol and Nitrotetrazolium Blue Chloride Compound As Levelers for Through-Hole Copper Electroplating

Bisphenol A Polyoxyethylene Ether Sodium Sulfate as a New Leveler for Electrodeposition of Copper

Enhanced Electrochemical Nitrate Reduction on Copper Nitride with Moderate Intermediates Adsorption