Abstract:In this letter, the origin and related physical insights of gate reliability issues under various Vgs and high temperatures (up to 300 °C) are revealed in-depth, through splitting MOS gate structure of silicon carbide (SiC) metal-oxide-semiconductor field-effect transistors (MOSFETs) into N-type JFET and P-type channel region under identical manufacturing processes and thermal budgets of SiC MOSFETs. From 25 to 300 °C, the safety limit of positive Vgs of SiC MOSFETs is mainly dependent on the gate oxide on the JFET surface, whereas that of negative Vgs is dependent on the gate oxide on the channel surface. The gate oxide on the channel surface is weaker than that on the JFET surface in terms of Fowler–Nordheim (F-N) tunneling, resulting in asymmetric safety Vgs of current SiC MOSFET. Moreover, when temperature ranges from 25 to 150 °C, the degradation of gate oxide under −15 V < Vgs < 25 V is caused by the hole or electron direct tunneling mechanism. However, when the temperature reaches 300 °C, the degradation of gate oxide under −5 V < Vgs < 10 V is caused by the hole or electron hopping conduction mechanism. Furthermore, the reliability of gate oxide is evaluated by the time-dependent dielectric breakdown measurement. The charge-to-breakdown (QBD) of gate oxide is severely degraded -t 300 °C mainly due to the barrier height (${it{ Phi}}_{rm B}$) degradation. These efforts can provide accurate weakness points of gate oxide under higher Vgs bias (particular for negative bias) and higher temperature (300 °C) for SiC MOSFETs, further helping use and design rugged converters with the fast-speed operation of SiC MOSFETs.

Preconditioning for Accurate Threshold Voltage Extraction of SiC MOSFETs after AC Bias Temperature Instability in Reliability Tests

Reliability Investigation on SiC Trench MOSFET under Repetitive Surge Current Stress of Body Diode

SiC MOSFET threshold-stability issues

Threshold voltage instability of SiC MOSFETs under very‐high temperature and wide gate bias

4H-SiC MOSFET Threshold Voltage Instability Evaluated via Pulsed High-Temperature Reverse Bias and Negative Gate Bias Stresses

Gate Oxide Failure Mechanisms of SiC MOSFET Related to Electro-Thermomechanical Stress under HTRB and HTGB Test

Gate Bias Dependence of V TH Degradation in Planar and Trench SiC MOSFETs Under Repetitive Short Circuit Tests

Effects of High Gate Voltage Stress on Threshold Voltage Stability in Planar and Trench SiC Power MOSFETs

Degradation Dependency Analysis and Modeling of 1700 V Planar-Gate SiC MOSFETs under Gate Switching Instability

Deep Understanding of Negative Gate Voltage Restriction for SiC mosfet Under Wide Temperature Range

Positive Bias Temperature Instability in SiC-Based Power MOSFETs

Role of Threshold Voltage Shift in Highly Accelerated Power Cycling Tests for SiC MOSFET Modules

Impact of Bias Temperature Instabilities on the Performance of Power Electronics Employing SiC MOSFETs

Investigation on gate oxide reliability under gate bias screening for commercial SiC planar and trench MOSFETs

Comprehensive Investigation of Gate Oxide Instability in 4H-SiC MOSFETs and MOS Capacitors Under High Gate Bias Stress

Online monitoring and correction method of threshold voltage in SiC MOSFET power cycling test

Gate Oxide Reliability and VTH Stability of Planar SiC MOS Technology

Investigation of Threshold Voltage Shift for SiC MOSFET in Switching Operation

Reliability of High-Mobility InGaAs Channel N-Mosfets under BTI Stress

Investigations on the Degradation of 1.2-Kv 4H-Sic Mosfets under Repetitive Short-Circuit Tests

Comparative Investigation on Aging Precursor and Failure Mechanism of Commercial SiC MOSFETs Under Different Power Cycling Conduction Modes