Charge Transport in Blue Quantum Dot Light‐Emitting Diodes

Shuxin Li,Wenxin Lin,Haonan Feng,Paul W. M. Blom,Jiangxia Huang,Jiahao Li,Xiongfeng Lin,Yulin Guo,Wenlin Liang,Longjia Wu,Quan Niu,Yuguang Ma
DOI: https://doi.org/10.1002/aelm.202400142
IF: 6.2
2024-01-01
Advanced Electronic Materials
Abstract:Although quantum dot light-emitting diodes (QLEDs) are extensively studied nowadays, their charge transport mechanism remains a subject of ongoing debate. Here, the hole transport in blue quantum dots (QDs) (CdZnSe/ZnSe/ZnS/CdZnS/ZnS based) is investigated by combining current-voltage and transient electroluminescence measurements. The study demonstrates that the hole transport in QD thin films is characterized by a trap-free space-charge-limited current with a zero-field room temperature mobility of 4.4 x 10-11 m2 V-1 s-1. The zero-field hole mobility is thermally activated with an activation energy of 0.30 eV. Applying the Extended Gaussian Disorder model provides a consistent description of the QD hole current as a function of voltage and temperature. The QD hole mobility is characterized by a hopping distance of 2.8 nm in a Gaussian broadened density of states with a width of 0.12 eV. Quantum dot semiconductor is a disordered system in which hole transport occurs via a hopping way. During the transport process, hole carriers hop between localized sites that exhibit a Gaussian distribution. In this study, the hole transport mechanism in quantum dots is investigated using single-carrier devices. The study employs the EGDM model to provide a quantitative analysis of this transport behavior. image
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