Abstract:Three dimensional topological insulators have a thriving application prospect in broadband photodetectors due to the possessed topological quantum states. Herein, a large area and uniform topological insulator bismuth telluride (Bi2Te3) layer with high crystalline quality is directly epitaxial grown on GaAs(111)B wafer using a molecular beam epitaxy process, ensuring efficient out-of-plane carriers transportation due to reduced interface defects influence. By tiling monolayer graphene (Gr) on the as-prepared Bi2Te3 layer, a Gr/Bi2Te3/GaAs heterojunction array prototype was further fabricated, and our photodetector array exhibited the capability of sensing ultrabroad photodetection wavebands from visible (405 nm) to mid-infrared (4.5 μm) with a high specific detectivity (D*) up to 1012 Jones and a fast response speed at about microseconds at room temperature. The enhanced device performance can be attributed to enhanced light–matter interaction at the high-quality heterointerface of Bi2Te3/GaAs and improved carrier collection efficiency through graphene as a charge collection medium, indicating an application prospect of topological insulator Bi2Te3 for fast-speed broadband photodetection up to a mid-infrared waveband. This work demonstrated the potential of integrated topological quantum materials with a conventional functional substrate to fabricate the next generation of broadband photodetection devices for uncooled focal plane array or infrared communication systems in future.The Supporting Information is available free of charge at https://pubs.acs.org/doi/10.1021/acsnano.2c00435.Figures of device fabrication flow of Gr/Bi2Te3/GaAs heterojunction PD array prototype, absorption spectrum of monolayer graphene, electrical and optical properties of the contrasting device, other optoelectronic properties of Gr/Bi2Te3/GaAs, response speed for Bi2Te3/GaAs and Gr/Bi2Te3/Gr PD, and consistency and long-term stability of the Gr/Bi2Te3/GaAs heterojunction array and tables of Hall effect test results of the epitaxial Bi2Te3 layer and performance comparison of ITs-based PDs (PDF)This article has not yet been cited by other publications.

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