Abstract:The ferrimagnetic semiconductor ${\mathrm{Mn}}_{3}{\mathrm{Si}}_{2}{\mathrm{Te}}_{6}$ keeps the records of colossal magnetoresistance (CMR) and angular magnetoresistance (AMR). Here we report tuning the electronic transport properties via doping and pressure in ${({\mathrm{Mn}}_{1\text{\ensuremath{-}}x}{\mathrm{Mg}}_{x})}_{3}{\mathrm{Si}}_{2}{\mathrm{Te}}_{6}$. As the substitution of nonmagnetic ${\mathrm{Mg}}^{2+}$ for magnetic ${\mathrm{Mn}}^{2+}$, ferrimagnetic transition temperature ${T}_{C}$ gradually decreases, while the resistivity increases significantly. At the same time, the CMR and AMR are both enhanced for the low-doping compositions (e.g., $x=0.1$ and 0.2), which can be attributed to the doping-induced broadening of the band gap and a larger variation range of the resistivity when undergoing a metal-insulator transition by applying a magnetic field along the $c$ axis. On the contrary, ${T}_{C}$ rises with increasing pressure due to the enhancement of the magnetic exchange interactions until a structural transition occurs at $\ensuremath{\sim}13$ GPa. Meanwhile, the activation gap is lowered under pressure and the magnetoresistance is decreased dramatically above 6 GPa where the gap is closed. At 20 and 26 GPa, weak drops in resistance indicating a superconducting transition at $\ensuremath{\sim}5$ K are observed. The results reveal that doping and pressure are effective methods to tune the activation gap, and correspondingly, the CMR and AMR in nodal-line semiconductors, providing an approach to investigate the magnetoresistance materials for novel spintronic devices.

Tuning the Colossal Magnetoresistance in (mn 1- X Mg X ) 3 Si 2 Te 6 by Engineering the Gap and Magnetic Properties Via Doping and Pressure

Gap and Magnetic Engineering Via Doping and Pressure in Tuning the Colossal Magnetoresistance in (Mn_1-Xmg_x)_3si_2te_6

Tuning the Colossal Magnetoresistance in ( Mn1−xMgx)3Si2Te6

Gap and magnetic engineering via doping and pressure in tuning the colossal magnetoresistance in (Mn$_{1-x}$Mg$_x$)$_3$Si$_2$Te$_6$

Pressure Engineering of Colossal Magnetoresistance in the Ferrimagnetic Nodal-Line Semiconductor Mn3Si2Te6

Magnetic-Transition-Induced Colossal Magnetoresistance in the Ferrimagnetic Semiconductor Mn_3Si_2Te_6

Magnetic-Transition-Induced Colossal Magnetoresistance in the Ferrimagnetic Semiconductor Mn$_3$Si$_2$Te$_6$

Colossal magnetoresistance via avoiding fully polarized magnetization in the ferrimagnetic insulator Mn 3 Si 2 Te 6

A substantial improvement in magnetoresistance by Cu doping at Mn sites of La2/3Ca1/3MnO3

Electrically Tunable, Rapid Spin-Orbit Torque Induced Modulation of Colossal Magnetoresistance in Mn_3Si_2Te_6 Nanoflakes

Electrically Tunable, Rapid Spin-Orbit Torque Induced Modulation of Colossal Magnetoresistance in Mn 3 Si 2 Te 6 Nanoflakes

Induced Ferromagnetism and Colossal Magnetoresistance by Ir-Doping in Pr1-xCaxMnO3

Extraordinary colossal magnetoresistance in La0.67Ca0.33Mn1−xCrxO3 (x⩽0.3)

Substantial Enhancements of Low-Field Magnetoresistance at Temperatures Near 77 K with Doping 4% Cu at Mn Sites of La 2/3 Ca 1/3 MnO 3 Synthesized at 1000°C

Spin transport of half-metal Mn2X3 with high Curie temperature: An ideal giant magnetoresistance device from electrical and thermal drives

Magnetic and Electronic Transport Properties of Mn-doped Silicon

Competition Between Ferromagnetic Metallic and Paramagnetic Insulating Phases in Manganites

The Effect of Mn Doping on the Electrical and Magnetic Properties of Cr2te3 Thin Films

Paramagnetic Anomalies above the Curie Temperature and Colossal Magnetoresistance in Optimally Doped Manganites

The Significant and Temperature-Insensitive Magnetoresistance Observed in Co-doped (la0.7sr0.3)mno3 Thin Films

Magnetic/structural phase diagram and enhanced giant magnetoresistance in Zn-doped antiperovskite compound Ga1-xZnxCMn3