Tuning the Colossal Magnetoresistance in ( Mn1−xMgx)3Si2Te6

Chaoxin Huang,Mengwu Huo,Xing Huang,Hui Liu,Lisi Li,Ziyou Zhang,Z. Y. Chen,Yifeng Han,Lan Chen,Feixiang Liang,Hongliang Dong,Bing Shen,Hualei Sun,Meng Wang

DOI: https://doi.org/10.1103/physrevb.109.205145

2024-01-01

Abstract:The ferrimagnetic semiconductor ${\mathrm{Mn}}_{3}{\mathrm{Si}}_{2}{\mathrm{Te}}_{6}$ keeps the records of colossal magnetoresistance (CMR) and angular magnetoresistance (AMR). Here we report tuning the electronic transport properties via doping and pressure in ${({\mathrm{Mn}}_{1\text{\ensuremath{-}}x}{\mathrm{Mg}}_{x})}_{3}{\mathrm{Si}}_{2}{\mathrm{Te}}_{6}$. As the substitution of nonmagnetic ${\mathrm{Mg}}^{2+}$ for magnetic ${\mathrm{Mn}}^{2+}$, ferrimagnetic transition temperature ${T}_{C}$ gradually decreases, while the resistivity increases significantly. At the same time, the CMR and AMR are both enhanced for the low-doping compositions (e.g., $x=0.1$ and 0.2), which can be attributed to the doping-induced broadening of the band gap and a larger variation range of the resistivity when undergoing a metal-insulator transition by applying a magnetic field along the $c$ axis. On the contrary, ${T}_{C}$ rises with increasing pressure due to the enhancement of the magnetic exchange interactions until a structural transition occurs at $\ensuremath{\sim}13$ GPa. Meanwhile, the activation gap is lowered under pressure and the magnetoresistance is decreased dramatically above 6 GPa where the gap is closed. At 20 and 26 GPa, weak drops in resistance indicating a superconducting transition at $\ensuremath{\sim}5$ K are observed. The results reveal that doping and pressure are effective methods to tune the activation gap, and correspondingly, the CMR and AMR in nodal-line semiconductors, providing an approach to investigate the magnetoresistance materials for novel spintronic devices.