Revealing the Empty-State Electronic Structure of Single-Unit-Cell FeSe/SrTiO[subscript 3]

Dennis Huang,Can‐Li Song,Tatiana A. Webb,Shiang Fang,Cui-Zu Chang,Jagadeesh S. Moodera,Efthimios Kaxiras,Jennifer Hoffman

IF: 8.6

2015-01-01

Physical Review Letters

Abstract:National Science Foundation (U.S.) (STC Center for Integrated Quantum Materials Grant DMR-1231319)

What problem does this paper attempt to address?

Revealing the Empty-State Electronic Structure of Single-Unit-Cell FeSe/SrTiO$_{3}$

Dennis Huang,Can-Li Song,Tatiana A. Webb,Shiang Fang,Cui-Zu Chang,Jagadeesh S. Moodera,Efthimios Kaxiras,Jennifer E. Hoffman

DOI: https://doi.org/10.1103/PhysRevLett.115.017002

2015-07-07

Abstract:We use scanning tunneling spectroscopy to investigate the filled and empty electronic states of superconducting single-unit-cell FeSe deposited on SrTiO$_3$(001). We map the momentum-space band structure by combining quasiparticle interference imaging with decay length spectroscopy. In addition to quantifying the filled-state bands, we discover a $\Gamma$-centered electron pocket 75 meV above the Fermi energy. Our density functional theory calculations show the orbital nature of empty states at $\Gamma$ and suggest that the Se height is a key tuning parameter of their energies, with broad implications for electronic properties.

Superconductivity,Strongly Correlated Electrons
Study of Intrinsic Defect States of FeSe with Scanning Tunneling Microscopy

Kunliang Bu,Bo Wang,Wenhao Zhang,Ying Fei,Yuan Zheng,Fangzhou Ai,Zongxiu Wu,Qisi Wang,Hongliang Wo,Jun Zhao,Chuanhong Jin,Yi Yin

DOI: https://doi.org/10.1103/physrevb.100.155127

2019-01-01

Abstract:We apply high resolution scanning tunneling microscopy to study intrinsic defect states of bulk FeSe. Four types of intrinsic defects including the type I dumbbell, type II dumbbell, top-layer Se vacancy and inner-layer Se-site defect are extensively analyzed by scanning tunneling spectroscopy. From characterized depression and enhancement of density of states measured in a large energy range, the type I dumbbell and type II dumbbell are determined to be the Fe vacancy and Se$_\mathrm{Fe}$ defect, respectively. The top-layer Se vacancy and possible inner-layer Se-site vacancy are also determined by spectroscopy analysis. The determination of defects are compared and largely confirmed in the annular dark-field scanning transmission electron microscopy measurement of the exfoliated FeSe. The detailed mapping of defect states in our experiment lays the foundation for a comparison with complex theoretical calculations in the future.
Atomic And Electronic Structures Of Single-Layer Fese On Srtio3(001): The Role Of Oxygen Deficiency

Junhyeok Bang,Zhi Li,Yiyang Sun,Amit K. Samanta,YuYang Zhang,Wenhao Zhang,Lili Wang,Xi Chen,Xucun Ma,Qikun Xue,Shengbai Zhang

DOI: https://doi.org/10.1103/PhysRevB.87.220503

IF: 3.7

2013-01-01

Physical Review B

Abstract:Using first-principles calculation, we propose an interface structure for single triple-layer FeSe on the SrTiO3(001) surface, a high-T-c superconductor found recently. The key component of this structure is the oxygen deficiency on the top layer of the SrTiO3 substrate, as a result of Se etching used in preparing the high-T-c samples. The O vacancies strongly bind the FeSe triple layer to the substrate giving rise to a (2 x 1) reconstruction, as observed by scanning tunneling microscopy. The enhanced binding correlates to the significant increase of T-c observed in experiment. The O vacancies also serve as the source of electron doping, which modifies the Fermi surface of the first FeSe layer by filling the hole pocket near the center of the surface Brillouin zone, as suggested from angle-resolved photoemission spectroscopy measurement.
Ubiquitous Strong Electron–phonon Coupling at the Interface of FeSe/SrTiO3

Chaofan Zhang,Zhongkai Liu,Zhuoyu Chen,Yanwu Xie,Ruihua He,Shujie Tang,Junfeng He,Wei Li,Tao Jia,Slavko N. Rebec,Eric Yue Ma,Hao Yan,Makoto Hashimoto,Donghui Lu,Sung-Kwan Mo,Yasuyuki Hikita,Robert G. Moore,Harold Y. Hwang,Dunghai Lee,Zhixun Shen

DOI: https://doi.org/10.1038/ncomms14468

IF: 16.6

2017-01-01

Nature Communications

Abstract:The observation of replica bands in single-unit-cell FeSe on SrTiO3 (STO)(001) by angle-resolved photoemission spectroscopy (ARPES) has led to the conjecture that the coupling between FeSe electrons and the STO phonons are responsible for the enhancement of Tc over other FeSe-based superconductors. However the recent observation of a similar superconducting gap in single-unit-cell FeSe/STO(110) raised the question of whether a similar mechanism applies. Here we report the ARPES study of the electronic structure of FeSe/STO(110). Similar to the results in FeSe/STO(001), clear replica bands are observed. We also present a comparative study of STO(001) and STO(110) bare surfaces, and observe similar replica bands separated by approximately the same energy, indicating this coupling is a generic feature of the STO surfaces and interfaces. Our findings suggest that the large superconducting gaps observed in FeSe films grown on different STO surface terminations are likely enhanced by a common mechanism.
Origin of the Electronic Structure in Single-Layer FeSe/SrTiO3 Films

Defa Liu,Xianxin Wu,Fangsen Li,Yong Hu,Jianwei Huang,Yu Xu,Cong Li,Yunyi Zang,Junfeng He,Lin Zhao,Shaolong He,Chenjia Tang,Zhi Li,Lili Wang,Qingyan Wang,Guodong Liu,Zuyan Xu,Xu-Cun Ma,Qi-Kun Xue,Jiangping Hu,X. J. Zhou

2020-01-01

Abstract: The accurate theoretical description of the underlying electronic structures is essential for understanding the superconducting mechanism of iron-based superconductors. Compared to bulk FeSe, the superconducting single-layer FeSe/SrTiO3 films exhibit a distinct electronic structure consisting of only electron Fermi pockets, due to the formation of a new band gap at the Brillouin zone (BZ) corners and an indirect band gap between the BZ center and corners. Although intensive studies have been carried out, the origin of such a distinct electronic structure and its connection to bulk FeSe remain unclear. Here we report a systematic study on the temperature evolution of the electronic structure in single-layer FeSe/SrTiO3 films by angle-resolved photoemission spectroscopy. A temperature-induced electronic phase transition was clearly observed at 200 K, above which the electronic structure of single-layer FeSe/SrTiO3 films restored to that of bulk FeSe, characterized by the closing of the new band gap and the vanishing of the indirect band gap. Moreover, the interfacial charge transfer effect induced band shift of ~ 60 meV was determined for the first time. These observations not only show the first direct evidence that the electronic structure of single-layer FeSe/SrTiO3 films originates from bulk FeSe through a combined effect of an electronic phase transition and an interfacial charge transfer, but also provide a quantitative basis for theoretical models in describing the electronic structure and understanding the superconducting mechanism in single-layer FeSe/SrTiO3 films.
Picoscale Structural Insight into Superconductivity of Monolayer FeSe/SrTiO 3

Rui Peng,Ke Zou,Myung‐Geun Han,Stephen D. Albright,Hawoong Hong,Claudia Lau,Hai-Chao Xu,Yimei Zhu,Frederick J. Walker,Charles Ahn

DOI: https://doi.org/10.1126/sciadv.aay4517

IF: 13.6

2020-01-01

Science Advances

Abstract:Experiments reveal interfacial atomic-scale structure that may be critical for the interface enhanced high T c in FeSe/SrTiO 3 .
Robust Fe Divalent State in One-Unit-cell FeSe/SrTiO3 Thin Films

Jingdong Shen,Wenxiang Jiang,Fengfeng Zhu,Guan-yong Wang,Huayao Li,Gan Zhao,Qian Li,Wensheng Yan,Wanli Yang,Yi-De Chuang,Jin-feng Jia,Dong Qian,L. Andrew Wray,Lin Miao

DOI: https://doi.org/10.1103/physrevb.106.245112

2022-01-01

Abstract:The orbital occupancy, as the origin of Hund's rule coupling, provides critical information in understanding the multiorbital iron-based superconductors. The one-unit-cell (1UC) FeSe thin film on a SrTiO3 substrate with superconductive Tc above 60 K has been reported with unique electronic structures as well as orbital occupancy. In this paper, we present the x-ray absorption spectroscopy and resonant inelastic x-ray scattering (RIXS) study of the FeSe/STO thin films of different thicknesses. Together with the atomic multiplet simulation analysis, the FeSe/STO thin films (from 1UC to 10UC) are shown with the pure 3d6 electronic configuration which is identical to the bulk FeSe. Moreover, 1UC FeSe/STO is found to be distinctively more persistent in hosting the 3d6 configuration other than the thicker films under the oxidization process. The robustness of the 3d6 in 1UC FeSe/STO is discussed as a result of charge transfer from the substrate, as well as a mechanism to maintain the high-Tc superconductivity. Finally, our research calls for a further high-resolution RIXS study of the pristine superconductive 1UC FeSe/STO thin film.
Origin of Charge Transfer and Enhanced Electron–phonon Coupling in Single Unit-Cell FeSe Films on SrTiO3

Huimin Zhang,Ding Zhang,Xiaowei Lu,Chong Liu,Guanyu Zhou,Xucun Ma,Lili Wang,Peng Jiang,Qi-Kun Xue,Xinhe Bao

DOI: https://doi.org/10.1038/s41467-017-00281-5

IF: 16.6

2017-01-01

Nature Communications

Abstract:Interface charge transfer and electron-phonon coupling have been suggested to play a crucial role in the recently discovered high-temperature superconductivity of single unit-cell FeSe films on SrTiO3. However, their origin remains elusive. Here, using ultraviolet photoemission spectroscopy (UPS) and element-sensitive X-ray photoemission spectroscopy (XPS), we identify the strengthened Ti-O bond that contributes to the interface enhanced electron-phonon coupling and unveil the band bending at the FeSe/SrTiO3 interface that leads to the charge transfer from SrTiO3 to FeSe films. We also observe band renormalization that accompanies the onset of superconductivity. Our results not only provide valuable insights into the mechanism of the interface-enhanced superconductivity, but also point out a promising route towards designing novel superconductors in heterostructures with band-bending induced charge transfer and interfacial enhanced electron-phonon coupling.
Atomically Resolved FeSe/SrTiO 3 (001) Interface Structure by Scanning Transmission Electron Microscopy

Fangsen Li,Qinghua Zhang,Chenjia Tang,Chong Liu,Jinan Shi,Caina Nie,Guanyu Zhou,Zheng Li,Wenhao Zhang,Can-Li Song,Ke He,Shuaihua Ji,Shengbai Zhang,Lin Gu,Lili Wang,Xu-Cun Ma,Qi-Kun Xue

DOI: https://doi.org/10.1088/2053-1583/3/2/024002

IF: 6.861

2016-01-01

2D Materials

Abstract:Interface-enhanced high-temperature superconductivity in one unit-cell (UC) FeSe films on SrTiO3(001) (STO) substrate has recently attracted much attention in condensed matter physics and material science. By combined in-situ scanning tunneling microscopy/spectroscopy (STM/STS) and ex-situ scanning transmission electron microscopy (STEM) studies, we report on atomically resolved structure including both lattice constants and actual atomic positions of the FeSe/STO interface under both non-superconducting and superconducting states. We observed TiO2 double layers (DLs) and significant atomic displacements in the top two layers of STO, lattice compression of the Se-Fe-Se triple layer, and relative shift between bottom Se and topmost Ti atoms. By imaging the interface structures under various superconducting states, we unveil a close correlation between interface structure and superconductivity. Our atomic-scale identification of FeSe/STO interface structure provides useful information on investigating the pairing mechanism of this interface-enhanced high-temperature superconducting system.
Dichotomy of the Electronic Structure and Superconductivity Between Single-Layer and Double-Layer FeSe/SrTiO3 Films

Xu Liu,Defa Liu,Wenhao Zhang,Junfeng He,Lin Zhao,Shaolong He,Daixiang Mou,Fangsen Li,Chenjia Tang,Zhi Li,Lili Wang,Yingying Peng,Yan Liu,Chaoyu Chen,Li Yu,Guodong Liu,Xiaoli Dong,Jun Zhang,Chuangtian Chen,Zuyan Xu,Xi Chen,Xucun Ma,Qikun Xue,X. J. Zhou

DOI: https://doi.org/10.1038/ncomms6047

IF: 16.6

2014-01-01

Nature Communications

Abstract:The latest discovery of possible high-temperature superconductivity in the single-layer FeSe film grown on a SrTiO3 substrate has generated much attention. Initial work found that, while the single-layer FeSe/SrTiO3 film exhibits a clear signature of superconductivity, the double-layer film shows an insulating behaviour. Such a marked layer-dependent difference is surprising and the underlying origin remains unclear. Here we report a comparative angle-resolved photoemission study between the single-layer and double-layer FeSe/SrTiO3 films annealed in vacuum. We find that, different from the single-layer FeSe/SrTiO3 film, the double-layer FeSe/SrTiO3 film is hard to get doped and remains in the semiconducting/insulating state under an extensive annealing condition. Such a behaviour originates from the much reduced doping efficiency in the bottom FeSe layer of the double-layer FeSe/SrTiO3 film from the FeSe-SrTiO3 interface. These observations provide key insights in understanding the doping mechanism and the origin of superconductivity in the FeSe/SrTiO3 films.
Electronic Structure and Spatial Inhomogeneity of Iron-Based Superconductor FeS*

Chengwei Wang,Meixiao Wang,Juan Jiang,Haifeng Yang,Lexian Yang,Wujun Shi,Xiaofang Lai,Sung-Kwan Mo,Alexei Barinov,Binghai Yan,Zhi Liu,Fuqiang Huang,Jinfeng Jia,Zhongkai Liu,Yulin Chen

DOI: https://doi.org/10.1088/1674-1056/ab75d4

2020-01-01

Abstract:Iron-based superconductor family FeX (X = S, Se, Te) has been one of the research foci in physics and material science due to their record-breaking superconducting temperature (FeSe film) and rich physical phenomena. Recently, FeS, the least studied FeX compound (due to the difficulty in synthesizing high quality macroscopic crystals) attracted much attention because of its puzzling superconducting pairing symmetry. In this work, combining scanning tunneling microscopy and angle resolved photoemission spectroscopy (ARPES) with sub-micron spatial resolution, we investigate the intrinsic electronic structures of superconducting FeS from individual single crystalline domains. Unlike FeTe or FeSe, FeS remains identical tetragonal structure from room temperature down to 5 K, and the band structures observed can be well reproduced by our ab-initio calculations. Remarkably, mixed with the 1 × 1 tetragonal metallic phase, we also observe the coexistence of 5 × 5 reconstructed insulating phase in the crystal, which not only helps explain the unusual properties of FeS, but also demonstrates the importance of using spatially resolved experimental tools in the study of this compound.
Atomically Resolved FeSe/SrTiO3(001) Interface Structure by Scanning Transmission Electron Microscopy

Fangsen Li,Qinghua Zhang,Chenjia Tang,Chong Liu,Jinan Shi,CaiNa Nie,Guanyu Zhou,Zheng Li,Wenhao Zhang,Can-Li Song,Ke He,Shuaihua Ji,Shengbai Zhang,Lin Gu,Lili Wang,Xu-Cun Ma,Qi-Kun Xue

DOI: https://doi.org/10.1088/2053-1583/3/2/024002

2015-12-17

Abstract:Interface-enhanced high-temperature superconductivity in one unit-cell (UC) FeSe films on SrTiO3(001) (STO) substrate has recently attracted much attention in condensed matter physics and material science. By combined in-situ scanning tunneling microscopy/spectroscopy (STM/STS) and ex-situ scanning transmission electron microscopy (STEM) studies, we report on atomically resolved structure including both lattice constants and actual atomic positions of the FeSe/STO interface under both non-superconducting and superconducting states. We observed TiO2 double layers (DLs) and significant atomic displacements in the top two layers of STO, lattice compression of the Se-Fe-Se triple layer, and relative shift between bottom Se and topmost Ti atoms. By imaging the interface structures under various superconducting states, we unveil a close correlation between interface structure and superconductivity. Our atomic-scale identification of FeSe/STO interface structure provides useful information on investigating the pairing mechanism of this interface-enhanced high-temperature superconducting system.

Superconductivity
Lattice Dynamics of Ultrathin FeSe Films on SrTiO3

Shuyuan Zhang,Jiaqi Guan,Yan Wang,Tom Berlijn,Steve Johnston,Xun Jia,Bing Liu,Qing Zhu,Qichang An,Siwei Xue,Yanwei Cao,Fang Yang,Weihua Wang,Jiandi Zhang,E. W. Plummer,Xuetao Zhu,Jiandong Guo

DOI: https://doi.org/10.1103/PhysRevB.97.035408

2018-01-05

Abstract:Charge transfer and electron-phonon coupling (EPC) are proposed to be two important constituents associated with enhanced superconductivity in the single unit cell FeSe films on oxide surfaces. Using high-resolution electron energy loss spectroscopy combined with first-principles calculations, we have explored the lattice dynamics of ultrathin FeSe films grown on SrTiO3. We show that, despite the significant effect from the substrate on the electronic structure and superconductivity of the system, the FeSe phonons in the films are unaffected. The energy dispersion and linewidth associated with the Fe- and Se-derived vibrational modes are thickness- and temperature-independent. Theoretical calculations indicate the crucial role of antiferromagnetic correlation in FeSe to reproduce the experimental phonon dispersion. Importantly, the only detectable change due to the growth of FeSe films is the broadening of the Fuchs-Kliewer (F-K) phonons associated with the lattice vibrations of SrTiO$_3$(001) substrate. If EPC plays any role in the enhancement of film superconductivity, it must be the interfacial coupling between the electrons in FeSe film and the F-K phonons from substrate rather than the phonons of FeSe.

Superconductivity,Materials Science
Picoscale structural insight into superconductivity of monolayer FeSe/SrTiO3.

Rui Peng,Ke Zou,M G Han,Stephen D Albright,Hawoong Hong,Claudia Lau,H C Xu,Yimei Zhu,F J Walker,C H Ahn

DOI: https://doi.org/10.1126/sciadv.aay4517

IF: 13.6

2020-01-01

Science Advances

Abstract:Remarkable enhancement of the superconducting transition temperature (T c) has been observed for monolayer (ML) FeSe films grown on SrTiO3 substrates. The atomic-scale structure of the FeSe/SrTiO3 interface is an important determinant of both the magnetic and interfacial electron-phonon interactions and is a key ingredient to understanding its high-T c superconductivity. We resolve the atomic-scale structure of the FeSe/SrTiO3 interface through a complementary analysis of scanning transmission electron microscopy and in situ surface x-ray diffraction. We find that the interface is more strongly bonded for a particular registration, which leads to a coherently strained ML. We also determine structural parameters, such as the distance between ML FeSe and the oxide, Se─Fe─Se bond angles, layer-resolved distances between Fe─Se, and registry of the FeSe lattice relative to the oxide. This picoscale structure determination provides an explicit structural framework and constraint for theoretical approaches addressing the high-T c mechanism in FeSe/SrTiO3.
Picoscale structural insight into superconductivity of monolayer FeSe/SrTiO<sub>3</sub>

Rui Peng,Ke Zou,M. G. Han,Stephen D. Albright,Hawoong Hong,Claudia Lau,H. C. Xu,Yimei Zhu,F. J. Walker,C. H. Ahn

DOI: https://doi.org/10.1126/sciadv.aay4517

IF: 13.6

2020-01-01

Science Advances

Abstract:Remarkable enhancement of the superconducting transition temperature (T-c) has been observed for monolayer (ML) FeSe films grown on SrTiO3 substrates. The atomic-scale structure of the FeSe/SrTiO3 interface is an important determinant of both the magnetic and interfacial electron-phonon interactions and is a key ingredient to understanding its high-T-c superconductivity. We resolve the atomic-scale structure of the FeSe/SrTiO3 interface through a complementary analysis of scanning transmission electron microscopy and in situ surface x-ray diffraction. We find that the interface is more strongly bonded for a particular registration, which leads to a coherently strained ML. We also determine structural parameters, such as the distance between ML FeSe and the oxide, Se-Fe-Se bond angles, layer-resolved distances between Fe-Se, and registry of the FeSe lattice relative to the oxide. This picoscale structure determination provides an explicit structural framework and constraint for theoretical approaches addressing the high-T-c mechanism in FeSe/SrTiO3.
Dichotomy of Electronic Structure and Superconductivity between Single-Layer and Double-Layer FeSe/SrTiO3 Films

Xu Liu,Defa Liu,Wenhao Zhang,Junfeng He,Lin Zhao,Shaolong He,Daixiang Mou,Fansen Li,Chenjia Tang,Zhi Li,Lili Wang,Yingying Peng,Yan Liu,Chaoyu Chen,Li Yu,Guodong Liu,Xiaoli Dong,Jun Zhang,Chuangtian Chen,Zuyan Xu,Xi Chen,Xucun Ma,Qikun Xue,X. J. Zhou

DOI: https://doi.org/10.1038/ncomms6047

2014-02-07

Abstract:The latest discovery of possible high temperature superconductivity in the single-layer FeSe film grown on a SrTiO3 substrate, together with the observation of its unique electronic structure and nodeless superconducting gap, has generated much attention. Initial work also found that, while the single-layer FeSe/SrTiO3 film exhibits a clear signature of superconductivity, the double-layer FeSe/SrTiO3 film shows an insulating behavior. Such a dramatic difference between the single-layer and double-layer FeSe/SrTiO3 films is surprising and the underlying origin remains unclear. Here we report our comparative study between the single-layer and double-layer FeSe/SrTiO3 films by performing a systematic angle-resolved photoemission study on the samples annealed in vacuum. We find that, like the single-layer FeSe/SrTiO3 film, the as-prepared double-layer FeSe/SrTiO3 film is insulating and possibly magnetic, thus establishing a universal existence of the magnetic phase in the FeSe/SrTiO3 films. In particular, the double-layer FeSe/SrTiO3 film shows a quite different doping behavior from the single-layer film in that it is hard to get doped and remains in the insulating state under an extensive annealing condition. The difference originates from the much reduced doping efficiency in the bottom FeSe layer of the double-layer FeSe/SrTiO3 film from the FeSe-SrTiO3 interface. These observations provide key insights in understanding the origin of superconductivity and the doping mechanism in the FeSe/SrTiO3 films. The property disparity between the single-layer and double-layer FeSe/SrTiO3 films may facilitate to fabricate electronic devices by making superconducting and insulating components on the same substrate under the same condition.

Superconductivity,Materials Science,Strongly Correlated Electrons
Asymmetrically Optimized Structure in a High-T C Single Unit-Cell FeSe Superconductor.

Yuki Fukaya,Guanyu Zhou,Fawei Zheng,Ping Zhang,Lili Wang,Qi-Kun Xue,Shin-ichi Shamoto

DOI: https://doi.org/10.1088/1361-648x/aaf2d9

2018-01-01

Journal of Physics Condensed Matter

Abstract:We report asymmetric Se heights in a single unit-cell (UC) FeSe on SrTiO3(0 0 1) substrate with the highest superconducting transition temperature (T-c) among the Fe-based superconductors revealed by total-reflection high-energy positron diffraction measurements. Among various iron-based superconductors, this single UC FeSe on the SrTiO3 (0 0 1) has been the best material to achieve the highest-T-c above 50 K. We found the asymmetric Se heights of 1.44 +/- 0.03 and 1.33 +/- 0.03 angstrom from the single Fe layer by the intensity analysis based on dynamical diffraction theory. The average Se height results in 1.39 +/- 0.04 angstrom, corresponding to the optimum value for Fe-based superconductors. In addition, the average of bond angles of Se-Fe-Se, 107.2 +/- 1.1 and 111.5 +/- 1.2 degrees becomes 109.3 +/- 1.6 degrees, which is close to the optimum value of 109.5 degrees for a regular tetrahedron. Thus, this single UC FeSe is found to have asymmetrically optimized structure. Based on our first-principles calculations, the asymmetry does not change the bandwidth whereas it splits the electron bands at the M point only at the bottom. These calculations suggest that at low electron doping, the structural asymmetry is expected to lead to exotic properties of non-centrosymmetric superconductivity, whereas after a certain amount of electron doping, average anion height plays an important role for high-T-c.
Antifferomagnetic FeSe Monolayer on SiTiO_3: the Charge Doping and Electric Field Effects

Fawei Zheng,Zhigang Wang,Wei Kang,Ping Zhang

2013-01-01

Abstract:We present theoretically the electronic structure of antiferromagnetic (AFM) FeSe monolayer on TiO_2 terminated SrTiO_3(001) surface. It is revealed that the striking disappearance of the Fermi surface around the Brillouin zone (BZ) center can be well explained by the antiferromatnetic (AFM) phase. We show that the system has a considerable charge transfer from SrTiO_3(001) substrate to FeSe monolayer, and so has a self-constructed electric field. The FeSe monolayer band structure near the BZ center is sensitive to charge doping, and the spin-resolved energy bands at BZ corner are distorted to be flattened by the perpendicular electric field. We propose a tight-binding model Hamiltonian to take these key factors into account. We also show that this composite structure is an ideal electron-hole bilayer system, with electrons and holes respectively formed in FeSe monolayer and TiO_2 surface layer.
Atomic-Site-Dependent Pairing Gap in Monolayer FeSe/SrTiO3(001)-(√13 × √13).

Cui Ding,Zhongxu Wei,Wenfeng Dong,Hai Feng,Mingxia Shi,Lili Wang,Jin-Feng Jia,Qi-Kun Xue

DOI: https://doi.org/10.1021/acs.nanolett.4c02627

IF: 10.8

2024-01-01

Nano Letters

Abstract:The interfacial FeSe/TiO2-delta coupling induces high-temperature superconductivity in monolayer FeSe films. Using cryogenic atomically resolved scanning tunneling microscopy/spectroscopy, we obtained atomic-site dependent surface density of states, work function, and the pairing gap in the monolayer FeSe on the SrTiO3(001)-(root 13 x root 13)-R33.7 degrees surface. Our results disclosed the out-of-plane Se-Fe-Se triple layer gradient variation, switched DOS for Fe sites on and off TiO5 square, and inequivalent Fe sublattices, which gives global spatial modulation of pairing gap contaminants with the (root 13 x root 13) pattern. Moreover, the coherent lattice coupling induces strong inversion asymmetry and in-plane anisotropy in the monolayer FeSe, which is demonstrated to correlate with the particle-hole asymmetry in coherence peaks. These results disclose delicate atomic-scale correlations between pairing and lattice-electronic coupling in the Bardeen-Cooper-Schrieffer to Bose-Einstein condensation crossover regime, providing insights into understanding the pairing mechanism of multiorbital superconductivity.
Nanoscale Imaging of Orbital Texture in Single-Layer FeSe/SrTiO$_3$

Dennis Huang,Tatiana A. Webb,Shiang Fang,Can‐Li Song,Cui-Zu Chang,Jagadeesh S. Moodera,Efthimios Kaxiras,Jennifer Hoffman

2015-01-01

Abstract:We use scanning tunneling microscopy (STM) and quasiparticle interference (QPI) imaging to investigate the low-energy orbital texture of single-layer FeSe/SrTiO$_3$. We develop a $T$-matrix model of multi-orbital QPI to disentangle scattering intensities from Fe $3d_{xz}$ and $3d_{yz}$ bands, enabling the use of STM as a nanoscale detection tool of nematicity. By sampling multiple spatial regions of a single-layer FeSe/SrTiO$_3$ film, we quantitatively exclude static $xz/yz$ orbital ordering with domain size larger than $\delta r^2$ = 20 nm $\times$ 20 nm, $xz/yz$ Fermi wave vector difference larger than $\delta k$ = 0.014 $\pi$, and energy splitting larger than $\delta E$ = 3.5 meV. The lack of detectable ordering pinned around defects places qualitative constraints on models of fluctuating nematicity.

Revealing the Empty-State Electronic Structure of Single-Unit-Cell FeSe/SrTiO[subscript 3]

Revealing the Empty-State Electronic Structure of Single-Unit-Cell FeSe/SrTiO$_{3}$

Study of Intrinsic Defect States of FeSe with Scanning Tunneling Microscopy

Atomic And Electronic Structures Of Single-Layer Fese On Srtio3(001): The Role Of Oxygen Deficiency

Ubiquitous Strong Electron–phonon Coupling at the Interface of FeSe/SrTiO3

Origin of the Electronic Structure in Single-Layer FeSe/SrTiO3 Films

Picoscale Structural Insight into Superconductivity of Monolayer FeSe/SrTiO 3

Robust Fe Divalent State in One-Unit-cell FeSe/SrTiO3 Thin Films

Origin of Charge Transfer and Enhanced Electron–phonon Coupling in Single Unit-Cell FeSe Films on SrTiO3

Atomically Resolved FeSe/SrTiO 3 (001) Interface Structure by Scanning Transmission Electron Microscopy

Dichotomy of the Electronic Structure and Superconductivity Between Single-Layer and Double-Layer FeSe/SrTiO3 Films

Electronic Structure and Spatial Inhomogeneity of Iron-Based Superconductor FeS*

Atomically Resolved FeSe/SrTiO3(001) Interface Structure by Scanning Transmission Electron Microscopy

Lattice Dynamics of Ultrathin FeSe Films on SrTiO3

Picoscale structural insight into superconductivity of monolayer FeSe/SrTiO3.

Picoscale structural insight into superconductivity of monolayer FeSe/SrTiO<sub>3</sub>

Dichotomy of Electronic Structure and Superconductivity between Single-Layer and Double-Layer FeSe/SrTiO3 Films

Asymmetrically Optimized Structure in a High-T C Single Unit-Cell FeSe Superconductor.

Antifferomagnetic FeSe Monolayer on SiTiO_3: the Charge Doping and Electric Field Effects

Atomic-Site-Dependent Pairing Gap in Monolayer FeSe/SrTiO3(001)-(√13 × √13).

Nanoscale Imaging of Orbital Texture in Single-Layer FeSe/SrTiO$_3$