Robust Fe Divalent State in One-Unit-cell FeSe/SrTiO3 Thin Films

Jingdong Shen,Wenxiang Jiang,Fengfeng Zhu,Guan-yong Wang,Huayao Li,Gan Zhao,Qian Li,Wensheng Yan,Wanli Yang,Yi-De Chuang,Jin-feng Jia,Dong Qian,L. Andrew Wray,Lin Miao
DOI: https://doi.org/10.1103/physrevb.106.245112
2022-01-01
Abstract:The orbital occupancy, as the origin of Hund's rule coupling, provides critical information in understanding the multiorbital iron-based superconductors. The one-unit-cell (1UC) FeSe thin film on a SrTiO3 substrate with superconductive Tc above 60 K has been reported with unique electronic structures as well as orbital occupancy. In this paper, we present the x-ray absorption spectroscopy and resonant inelastic x-ray scattering (RIXS) study of the FeSe/STO thin films of different thicknesses. Together with the atomic multiplet simulation analysis, the FeSe/STO thin films (from 1UC to 10UC) are shown with the pure 3d6 electronic configuration which is identical to the bulk FeSe. Moreover, 1UC FeSe/STO is found to be distinctively more persistent in hosting the 3d6 configuration other than the thicker films under the oxidization process. The robustness of the 3d6 in 1UC FeSe/STO is discussed as a result of charge transfer from the substrate, as well as a mechanism to maintain the high-Tc superconductivity. Finally, our research calls for a further high-resolution RIXS study of the pristine superconductive 1UC FeSe/STO thin film.
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