Interface enhanced high temperature superconductivity in single unit cell films on

Fangsen Li,Hao Ding,Chenjia Tang,Junping Peng,Qinghua Zhang,Wenhao Zhang,Guanyu Zhou,Ding Zhang,Can-Li Song,Ke He,Shuaihua Ji,Xi Chen,Lin Gu,Lili Wang,Xu-Cun Ma,Qi-Kun Xue
IF: 3.7
2015-01-01
Physical Review B
Abstract:Recently discovered high-temperature superconductivity in single-unit-cell (UC) FeSe films on SrTi O 3 (STO) substrate has stimulated tremendous research interest, both experimental and theoretical. Whether this scenario could be extended to other superconductors is vital in both identifying the enhanced superconductivity mechanism and further raising the critical transition temperature (T c). Here we successfully prepared single-UC FeT e 1− x S e x (0.1≤ x≤ 0.6) films on STO substrates by molecular beam epitaxy and observed U-shaped superconducting gaps (Δ) up to∼ 16.5 meV, nearly ten times the gap value (Δ∼ 1.7 meV) of the optimally doped bulk FeT e 0. 6 S e 0. 4 single crystal (T c∼ 14.5 K). No superconducting gap has been observed on the second UC and thicker FeT e 1− x S e x films at 5.7 K, indicating the important role of the interface. This interface-enhanced high-temperature superconductivity …
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