Interface-Enhanced High-Temperature Superconductivity In Single-Unit-Cell Fete1-Xsex Films On Srtio3

Fangsen Li,Hao Ding,Chenjia Tang,Junping Peng,Qinghua Zhang,Wenhao Zhang,Guanyu Zhou,Ding Zhang,Can-Li Song,Ke He,Shuaihua Ji,Xi Chen,Lin Gu,Lili Wang,Xu-Cun Ma,Qi-Kun Xue
DOI: https://doi.org/10.1103/PhysRevB.91.220503
IF: 3.7
2015-01-01
Physical Review B
Abstract:Recently discovered high-temperature superconductivity in single-unit-cell (UC) FeSe films on SrTiO3 (STO) substrate has stimulated tremendous research interest, both experimental and theoretical. Whether this scenario could be extended to other superconductors is vital in both identifying the enhanced superconductivity mechanism and further raising the critical transition temperature (T-c). Here we successfully prepared single-UC FeTe1-xSex (0.1 <= x <= 0.6) films on STO substrates by molecular beam epitaxy and observed U-shaped superconducting gaps (Delta) up to similar to 16.5meV, nearly ten times the gap value (Delta similar to 1.7meV) of the optimally doped bulk FeTe0.6Se0.4 single crystal (T-c similar to 14.5K). No superconducting gap has been observed on the second UC and thicker FeTe1-x Se x films at 5.7 K, indicating the important role of the interface. This interface-enhanced high-temperature superconductivity is further confirmed by ex situ transport measurements, which revealed an onset superconducting transition temperature above 40 K, nearly two times higher than that of the optimally doped bulk FeTe0.6Se0.4 single crystal. This work demonstrates that interface engineering is a feasible way to discover alternative superconductors with higher T-c.
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