Abstract:The rapid development of the next-generation high-speed wireless communication system has set increasingly stringent requirements on the spectral purity of local RF oscillators. Low phase noise is crucial to support advanced modulation scheme enabling high data-rates wireless link [1]. A viable popular approach is to coupled N identical oscillators together to improve the phase noise by 10log <inf xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">10</inf> N at the cost of N times higher power [2]–[6]. Nevertheless, the coupling network needs to be designed carefully to avoid undesired multi-tone concurrent oscillations. Besides, area occupation is another issue of multi-core VCOs. The star-geometry as shown in Fig. 1. (bottom left), which is simple N times duplication of single core, occupies N times larger area so comes with an area penalty [3]–[5]. To solve this problem, circular geometry is proposed where the passives are merged into a single passive structure and the minimal realizable inductance is reduced while keeping a high Q factor [6]–[7]. In order to further reduce the silicon area, a square-geometry quad-core oscillator with inductor sharing technique is proposed in this paper and it exhibits a compact area of 0.09 mm <sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</sup> , which is the smallest quad-core VCO operating at a similar oscillation frequency. The unwanted mode is suppressed by the metal trace that connects the drain node of adjacent cores. Thanks to the proposed square-geometry and inductor sharing technique, the proposed quad-core class-F VCO can further reduce the area occupation. The proposed VCO is fabricated in 65nm CMOS technology. The measured phase noise is -137.2 dB/Hz at 10 MHz offset frequency from a carrier of 19 GHz, which translates to the FoM of 186.1 dBc/Hz.

A 93.4–104.8-Ghz 57-Mw Fractional- ${N}$ Cascaded PLL with True In-Phase Injection-Coupled QVCO in 65-Nm CMOS Technology

A 93.4-to-104.8 GHz 57 mW fractional-N cascaded sub-sampling PLL with true in-phase injection-coupled QVCO in 65 nm CMOS

A Low Power Sub-GHz PLL with Optimized Class-C Voltage-controlled Oscillator

A Low Phase Noise V-Band 40 Nm Cmos Phase Locked Loop For Wireless Communication

A 0.8 V Low Power Low Phase-Noise Pll

A 40 Ghz 65 Nm Cmos Phase-Locked Loop with Optimized Shunt-Peaked Buffer

A 68.1-to-73.8ghz E-band Low Phase Noise QPLL with Amplifier Feedback QVCO in 65-Nm CMOS

A 12-GHz Wideband Fractional-N PLL With Robust VCO in 65-nm CMOS

A 56-To-66 Ghz Quadrature Phase-Locked Loop With A Wide Locking Range Divider Chain In 65nm Cmos

A 66-to-76ghz E-band QPLL with Amplifier Feedback QVCO in 65-Nm CMOS

A low-noise, 0.05–17.8-GHz fractional-N phase-locked loop with two parallel synchronized dual-core voltage-controlled oscillators

A 1.41–1.72 GHz sigma-delta fractional-N frequency synthesizer with a PVT insensitive VCO and a new prescaler

A K-Band Fractional-N Frequency Synthesizer with a Low Phase Noise LC VCO in 90nm CMOS.

A Compact Square-Geometry Quad-Core 19 GHz Class-F VCO with Parallel Inductor-sharing Technique achieving -137.2 dBc/Hz Phase Noise at 10MHz Offset

A 63–89-Khz 1/ $f^{3}$ Phase Noise Corner QVCO Using Enhanced Wideband-Harmonic-Shaping Technique

A 37.2-Fs, -254.6-db FoM, 47.9-to-56.4 GHz PLL Using Tightly Coupled Dual-core VCO with Implicit 4th Harmonic Extraction Technique

A 3.57-Mw 2.88-Ghz Multi-Phase Injection-Locked Ring-VCO with a 200-Khz 1/f³ Phase Noise Corner

A Low-Phase-Noise 8 GHz Linear-Band Sub-Millimeter-Wave Phase-Locked Loop in 22 nm FD-SOI CMOS

A Cascaded Mode-Switching Sub-Sampling PLL with Quadrature Dual-Mode Voltage Waveform-Shaping Oscillator.

A 29.5 to 31.7 GHz PLL in 65 Nm CMOS Technology

Low-noise Fractional-N PLL Design with Mixed-Mode Triple-Input LC VCO in 65nm CMOS