Design and Characterization of Eu2+/Ln3+ Co-doped SrAl2Si2O8 Photostimulated Phosphors for Optical Information Storages
Shengyi Liu,Duan Gao,Li Wang,Wenbin Song,Jun Huang,Wenjun Zheng,Qi Zhang,Peijia Xiao
DOI: https://doi.org/10.1080/07315171.2023.2300595
2024-02-01
Ferroelectrics Letters Section
Abstract:In this paper, a series of Sr 0.96 Al 2 Si 2 O 8 phosphors doped with 0.02Eu 2+ and 0.02Re 3+ (where Re = Tm, Dy, Er, Nd, Sm, La, Ho) were synthesized using the high-temperature solid-phase method at 1350 °C for 4 hours. The samples underwent characterization for structural and phase analysis using XRD-6000. Fluorescence and photostimulated properties were evaluated with F-4600. The pyroluminescence curve indicates a trap depth of 0.6-0.8 eV for Sr 0.96 Al 2 Si 2 O 8 : 0.02Eu 2+ , 0.02Re 3+ (where Re = Dy, Er, Sm, La, Ho), making it suitable for prolonged afterglow luminescence. In comparison with deep trap material Sr 0.96 Al 2 Si 2 O 8 : 0.02Eu 2+ , 0.02Nd 3+ , the generated traps approach or exceed 1 eV, suggesting its potential for use as a light excitation and optical storage material. Additionally, the correlation between sample TL and PSL was examined, confirming that the augmentation of initial photostimulated luminescence intensity is closely associated with the generation of new traps. Furthermore, considering the effect of different trivalent lanthanide rare earth ion doping on trap depth from a trap regulation perspective offers a potential avenue for elucidating the nuanced processes underlying photostimulated luminescence.
physics, condensed matter