Abstract:The mechanism of the peculiar transport properties around the magnetic ordering temperature of semiconducting antiferromagnetic EuCd$_2$P$_2$ is not yet understood. With a huge peak in the resistivity observed above the Néel temperature, $T_{\rm N}=10.6\,\rm K$, it exhibits a colossal magnetoresistance effect. Recent reports on observations of ferromagnetic contributions above $T_{\rm N}$ as well as metallic behavior below this temperature have motivated us to perform a comprehensive characterization of this material, including its resistivity, heat capacity, magnetic properties and electronic structure. Our transport measurements revealed quite different temperature dependence of resistivity with the maximum at $14\,\rm K$ instead of previously reported $18\,\rm K$. Low-field susceptibility data support the presence of static ferromagnetism above $T_{\rm N}$ and show a complex behavior of the material at small applied magnetic fields. Namely, signatures of reorientation of magnetic domains are observed up to $T=16\,\rm K$. Our magnetization measurements indicate a magnetocrystalline anisotropy which also leads to a preferred alignment of the magnetic clusters above $T_{\rm N}$. The momentum-resolved photoemission experiments at temperatures from $24\,\rm K$ down to $2.5\,\rm K$ indicate the permanent presence of a fundamental band gap without change of the electronic structure when going through $T_N$ that is in contradiction with previous results. We performed \textit{ab initio} band structure calculations which are in good agreement with the measured photoemission data when assuming an antiferromagnetic ground state. Calculations for the ferromagnetic phase show a much smaller bandgap, indicating the importance of possible ferromagnetic contributions for the explanation of the colossal magnetoresistance effect in the related EuZn$_2$P$_2$.

Manipulating Magnetism and Transport Properties of EuCd_2P_2 with a Low Carrier Concentration

Manipulating magnetism and transport properties of EuCd$_2$P$_2$ with a low carrier concentration

Carrier-induced transition from antiferromagnetic insulator to ferromagnetic metal in the layered phosphide EuZn$_2$P$_2$

Carrier-induced Transition from Antiferromagnetic Insulator to Ferromagnetic Metal in the Layered Phosphide EuZn2P2

Recent advances in understanding and manipulating magnetic and electronic properties of Eu M2X2(M= Zn, Cd; X= P, As)

Magnetism, heat capacity and electronic structure of EuCd$_2$P$_2$ in view of its colossal magnetoresistance

Recent advances in understanding and manipulating magnetic and electronic properties of Eu$M_2X_2$ ($M$ = Zn, Cd; $X$ = P, As)

Large Positive and Negative Magnetoresistance in the Magnetic EuCu4As2 Crystal

Electronic Band Reconstruction Across the Insulator-Metal Transition in Colossally Magnetoresistive EuCd2P2

Giant and Reversible Electronic Structure Evolution in a Magnetic Topological Material EuCd2As2

Electronic band reconstruction across the insulator-metal transition in colossal magnetoresistive EuCd2P2

Enhancing thermopower and Nernst signal of high-mobility Dirac carriers by Fermi level tuning in the layered magnet EuMnBi$_2$

Magnetism and Transport Properties of EuCdBi<sub>2</sub> with Bi Square Net

Tuning magnetic properties of two-dimensional antiferromagnetic M P X 3 by organic cations intercalation

Anisotropic Transport and Optical Spectroscopy Study on Antiferromagnetic Triangular Lattice Eucd2as2: an Interplay Between Magnetism and Charge Transport Properties

Colossal Angular Magnetoresistance in the Antiferromagnetic Semiconductor EuTe2

Intrinsic insulating transport characteristics in low-carrier density EuCd2As2 films

Structure-dependent spin-polarized electron transport in twin-crystal Cu1- xEuxO semiconductors

Colossal Magnetoresistance Without Mixed Valence in a Layered Phosphide Crystal

Colossal angular magnetoresistance in the antiferromagnetic semiconductor EuTe 2

Colossal magnetoresistance from spin-polarized polarons in an Ising system