Carrier-induced Transition from Antiferromagnetic Insulator to Ferromagnetic Metal in the Layered Phosphide EuZn2P2

Xiyu Chen,Wuzhang Yang,Jia-Yi Lu,Zhiyu Zhou,Zhi Ren,Guang-Han Cao,Shuai Dong,Zhi-Cheng Wang
DOI: https://doi.org/10.1103/physrevb.109.l180410
IF: 3.7
2024-01-01
Physical Review B
Abstract:EuZn_2P_2 was reported to be an insulating antiferromagnet withT_N of 23.5 K. In this study, single crystals of EuZn_2P_2exhibiting metallic behavior and a ferromagnetic order of 72 K (T_C)are successfully synthesized via a salt flux method. The presence of holecarriers induced by the Eu vacancies in the lattice is found to be crucial forthe drastic changes in magnetism and electrical transport. The carriers mediatethe interlayer ferromagnetic interaction, and the coupling strength is directlyrelated to T_C, as evidenced by the linear dependence ofT_C and the fitted Curie-Weiss temperatures on the Eu-layerdistances for ferromagnetic EuM_2X_2 (M = Zn, Cd; X = P, As). Theferromagnetic EuZn_2P_2 shows conspicuous negative magnetoresistance (MR)near T_C, owing to strong magnetic scattering. The MR behavior isconsistent with the Majumdar-Littlewood model, indicating that the MR can beenhanced by decreasing the carrier density. Our findings suggest thatEuM_2X_2 has highly tunable magnetism and charge transport, making it apromising material family for potential applications in spintronics.
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