One-step Thermal-Plasma Synthesis of Sulphur and Nitrogen Dual-Doped Graphene with Improved Microwave-Absorption Efficiency

Zhaoyu Yu,Ming Song,Jingwei Guo,Haixiao Wei,Weidong Xia,Cheng Wang
DOI: https://doi.org/10.1016/j.jallcom.2024.175106
IF: 6.2
2024-01-01
Journal of Alloys and Compounds
Abstract:This study presented the one-step synthesis of sulphur (S) and nitrogen (N) dual-doped graphene using atmospheric thermal plasma. The doped graphene was synthesized in the magnetically rotating arc plasma with CS2 as the sulphur source, N2 as the nitrogen source and CH4 as the carbon source. At the same reaction temperature, the concentrations of S and N in S and N dual-doped graphene were higher than those in S/ N -doped graphene, which indicated that the dual-doped mode had a promoting effect on the doping level. In addition, increasing the input power effectively increased the doping levels of S and N atoms, which were up to 15.0 at% and 6.9 at%, respectively, at an input power of 19kW. The S and N dual-doped graphene displayed excellent microwave absorption capability, with an optimal reflection loss of −56.4dB at 16.3GHz, and the effective absorption bandwidth reached 5.7GHz when the doping levels of S and N atoms were 12.2 at% and 5.1 at%. This simple and rapid method for preparing S and N dual-doped graphene might facilitate the application of heteroatom doped graphene.
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