Mid-infrared Barium Titanate Electro-Optic Modulators Based on Germanium-on-silicon Platform

Tong Huang,Ruyuan Ma,Yingxuan Liu,Tianqi Xu,Yang Qiu,Xingyan Zhao,Shaonan Zheng,Qize Zhong,Yuan Dong,Ting Hu
DOI: https://doi.org/10.1364/ao.525623
IF: 1.9
2024-01-01
Applied Optics
Abstract:Mid-infrared electro-optic (EO) modulation efficiency and high-frequency performance of barium titanate (BTO) modulators on a germanium-on-silicon platform are investigated. Leveraging its exceptional Pockels coefficients, BTO exhibits remarkable EO modulation capabilities in both transverse-electric (TE) mode for a-axis growth and transverse-magnetic (TM) mode for c-axis growth. At the wavelength of 3.8 mu m, the V pi L for a-axis oriented BTO (TE polarization) is 1.90 V cm, and for c-axis oriented BTO (TM polarization), it is 2.32 V cm, which have better performance than those of the Pockels effect based EO modulators from literature. In addition, the highfrequency EO response of the modulator is simulated, and a 3-dB EO bandwidth of 62.82 GHz with the optimized traveling wave electrodes is achieved, showing promise in the high-speed MIR applications such as free-space optical communications. (c) 2024 Optica Publishing Group
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