Abstract:—As semiconductor technology nodes continue to scale down to 3 nm, the self-heating effect in Gate-All-Around Nanosheet Field-Effect Transistors (GAA-NSFETs) has become a significant concern. This issue arises due to the complex interaction between device dimensions, material properties, and thermal management, which can lead to performance degradation and reliability challenges in advanced transistor designs. This paper aims to investigate the self-heating phenomenon in three-stacked nanosheet FETs and to develop a novel thermal resistance model that accurately captures the thermal behavior of these devices. The goal is to create a reliable framework for analyzing and mitigating self-heating effects in nanosheet-based transistors. We employed TCAD and SPICE simulations to analyze the self-heating effect in nanosheet FETs. A new multi-stage thermal resistance model (TRM), incorporating both thermal resistance (Rₜₕ) and thermal capacitance (Cₜₕ), was developed within the Berkeley Short-channel IGFET Model-Common MultiGate (BSIM-CMG) framework. Model accuracy was ensured by fitting the simulated ID-VG curves to experimental data, followed by parameter extraction and calibration based on self-heating evaluations. The proposed multi-stage Rₜₕ model demonstrated strong agreement with the simulation results, providing an accurate representation of the thermal behavior in three-stacked nanosheet FETs. This model offers a robust tool for analyzing self-heating effects in advanced nanosheet devices and can be used to guide the design and optimization of future low-power, high-performance transistors.

A Thermal Profile Prediction Methodology for Nanosheet Circuits Featuring Cross-Layer Thermal Coupling Effect

Electrothermal Cosimulation of 3-D Carbon-Based Heterogeneous Interconnects

Thermal-Fluid Co-Simulation and Modelling of IGBT with Thermal Resistance Network

A Thermal Network Model for Multichip Power Modules Enabling to Characterize the Thermal Coupling Effects

Computational Study of Thermal Stress in Gate-All-Around Nanosheet Field Effect Transistor

A Neural Network-based Framework for Accelerated Device-Circuit Electrothermal Co-Simulations in GAAFETs

Analytical Multistage Thermal Resistance Model for NSFET Self-heating Effects

Layout Design Correlated with Self-Heating Effect in Stacked Nanosheet Transistors

An Artificial Neural Network Model for Electro-Thermal Effect Affected Hot Carrier Injection Reliability in 14-nm FinFETs

Thermal Coupling Among Channels and Its DC Modeling in Sub-7-nm Vertically Stacked Nanosheet Gate-All-Around Transistor

Multiphysics Simulation of Self-Heating-Induced Thermal Stress Effects on Quantum Transport in Gate-All-Around Nanosheet Field Effect Transistors

Thermal-aware electrical analysis of high-speed interconnect

A Physics-based Thermal Model of Nanosheet MOSFETs for Device-Circuit Co-design

Thermal Analysis on Active Heat Dissipation Design with Embedded Flow Channels for Flexible Electronic Devices

Signature of electrothermal transport in 18nm vertical junctionless gate-all-around nanowire field effect transistors

Unified Self-Heating Effect Model for Advanced Digital and Analog Technology and Thermal-Aware Lifetime Prediction Methodology

Thermal conductivity prediction by atomistic simulation methods: Recent advances and detailed comparison

A Full Chip Scale Numerical Simulation Method for Thermal Management of 3D IC

Investigation of Self-Heating Effect on Stacked Nanosheet GAA Transistors

Integrating First-Principles-Based Non-Fourier Thermal Analysis Into Nanoscale Device Simulation

Analytical Multistage Thermal Model for FEOL Reliability Considering Self-and Mutual-Heating