Abstract:Two-dimensional (2D) photodetectors based on semiconducting transitional metal chalcogenides (TMDs) have attracted much attention because of its unique mechanical and opto-electronic properties which can be integrated into nanoscale-sized opto-electronic devices and complex circuits. However, the photodetection range of 2D TMDs materials based detectors are generally limited within the visible range due to its intrinsic relatively large band-gap. In addition, 2D TMDs materials also suffers from weak light absorption inherited from their atomically thin layers, resulting in a photoresponsivity that can be further improved. Herein, by combining 2D MoS2 with zero-dimensional (0D) PbSe quantum dots (QDs) and Au nanocrystals (NCs), a novel 2D-0D photo detector (i.e., MoS2/PbSe@Au) is fabricated. Our MoS2/PbSe@Au photodetector exploits the 2D MoS2 as the conduction channels and PbSe@Au NCs as light sensitizer, which promote the absorption of the entire device and enable appreciable photodetection extending to the near-infrared (NIR). Prominently, the mixed-dimensional photodetector exhibits high responsivity of 1.22 A/W and detectivity of 1.56*10(9) Jones (cm.Hz(1/2).W-1) at NIR (e.g., 1064 nm) compared with the MoS2 photodetector with PbSe QDs only, which are ascribed to the more efficient two-step charge transfer process between PbSe and MoS2 with the presence of Au NCs. We further identify the new carrier multiplication mechanism when comparing the photoresponse of our photodetectors at 405 nm and 635 nm. We found the extremely high EQE of MoS2/PbSe@Au photodetector at the wavelength of 405 nm (268.1%) could be ascribed to the synergism of carrier multiplication (CM) in PbSe QDs and the photo gating effect induced by Au nanoparticles. Our study demonstrates that the novel mixed-dimensional photodetectors based on CVD-grown MoS2 may provide a new route for designing and realizing high-performance optoelectronic devices with harvesting merits of hybrid nanomaterials.

High-Detectivity and Broadband MoS2 Phototransistor Array by Coupling Negative Capacitance and Local Surface Plasmon Resonance Effects

Enhanced Visible to Near-Infrared Photodetectors Made from MoS2-based Mixed-Dimensional Structures

A New Strategy to Improve the Performance of MoS2-based 2D Photodetector by Synergism of Colloidal CuInS2 Quantum Dots and Surface Plasma Resonance of Noble Metal Nanoparticles

Ultrasensitive Negative Capacitance Phototransistors

High Responsivity Photodetector Based on Monolayer Molybdenum Disulfide (MoS 2 )

Ultrasensitive and broadband MoS2 photodetector driven by ferroelectrics

High Performance MoS2 Phototransistors Photogated by PN Junction

A floating gate negative capacitance MoS2 phototransistor with high photosensitivity

Visible to Near-Infrared Photodetectors Based on MoS2 Vertical Schottky Junctions

An ultrasensitive molybdenum-based double-heterojunction phototransistor

Highly responsive broadband Si-based MoS2 phototransistor on high-k dielectric

High-responsivity, high-detectivity, broadband infrared photodetector based on MoS2/BP/MoS2 junction field-effect transistor

Photovoltaic high-performance broadband photodetector based on the heterojunction of MoS 2 /silicon nanopillar arrays

An Ultrasensitive and Broad‐Spectrum MoS2 Photodetector with Extrinsic Response Using Surrounding Homojunction

Photodetectors: Ultrasensitive and Broadband MoS2 Photodetector Driven by Ferroelectrics (adv. Mater. 42/2015)

MoS2/HfO2/Silicon‐On‐Insulator Dual‐Photogating Transistor with Ambipolar Photoresponsivity for High‐Resolution Light Wavelength Detection

Broadband, Polarization-Sensitive, and Self-Powered High-Performance Photodetection of Hetero-Integrated MoS2 on Lithium Niobate

Amorphous MoS2 Photodetector with Ultra-Broadband Response

Fast and high-responsivity MoS2/MoSe2 heterostructure photodetectors enabled by van der Waals contact interfaces

Highly Sensitive MoS2Photodetector Based on Charge Integration and Field-Coupled Effect

Highly Sensitive MoS2 Photodetector on Polarized Thin-Film Lithium Niobate with Extremely Low Dark Current