Abstract:Two-dimensional (2D) photodetectors based on semiconducting transitional metal chalcogenides (TMDs) have attracted much attention because of its unique mechanical and opto-electronic properties which can be integrated into nanoscale-sized opto-electronic devices and complex circuits. However, the photodetection range of 2D TMDs materials based detectors are generally limited within the visible range due to its intrinsic relatively large band-gap. In addition, 2D TMDs materials also suffers from weak light absorption inherited from their atomically thin layers, resulting in a photoresponsivity that can be further improved. Herein, by combining 2D MoS2 with zero-dimensional (0D) PbSe quantum dots (QDs) and Au nanocrystals (NCs), a novel 2D-0D photo detector (i.e., MoS2/PbSe@Au) is fabricated. Our MoS2/PbSe@Au photodetector exploits the 2D MoS2 as the conduction channels and PbSe@Au NCs as light sensitizer, which promote the absorption of the entire device and enable appreciable photodetection extending to the near-infrared (NIR). Prominently, the mixed-dimensional photodetector exhibits high responsivity of 1.22 A/W and detectivity of 1.56*10(9) Jones (cm.Hz(1/2).W-1) at NIR (e.g., 1064 nm) compared with the MoS2 photodetector with PbSe QDs only, which are ascribed to the more efficient two-step charge transfer process between PbSe and MoS2 with the presence of Au NCs. We further identify the new carrier multiplication mechanism when comparing the photoresponse of our photodetectors at 405 nm and 635 nm. We found the extremely high EQE of MoS2/PbSe@Au photodetector at the wavelength of 405 nm (268.1%) could be ascribed to the synergism of carrier multiplication (CM) in PbSe QDs and the photo gating effect induced by Au nanoparticles. Our study demonstrates that the novel mixed-dimensional photodetectors based on CVD-grown MoS2 may provide a new route for designing and realizing high-performance optoelectronic devices with harvesting merits of hybrid nanomaterials.

Ultrasensitive Negative Capacitance Phototransistors

A floating gate negative capacitance MoS2 phototransistor with high photosensitivity

An ultrasensitive molybdenum-based double-heterojunction phototransistor

High Responsivity Photodetector Based on Monolayer Molybdenum Disulfide (MoS 2 )

Ultrasensitive and broadband MoS2 photodetector driven by ferroelectrics

High-performance MoS2phototransistors with Hf1-xAlxO back-gate dielectric layer grown by plasma enhanced atomic layer deposition.

High-performance MoS2 Phototransistors with Hf1–x Al X O Back-Gate Dielectric Layer Grown by Plasma Enhanced Atomic Layer Deposition

High Performance MoS2 Phototransistors Photogated by PN Junction

Dual-gate MoS2phototransistor with Atomic-Layer-deposited HfO2as Top-Gate Dielectric for Ultrahigh Photoresponsivity.

A Gate-Free MoS2 Phototransistor Assisted by Ferroelectrics

Highly Sensitive MoS2Photodetector Based on Charge Integration and Field-Coupled Effect

A Dual-gate MoS2 Photodetector Based on Interface Coupling Effect

A fast 2D MoS2 photodetector with ultralow contact resistance

Ultrahigh Photoresponsivity MoS2 Photodetector with Tunable Photocurrent Generation Mechanism.

Dual-gate MoS 2 phototransistor with atomic-layer-deposited HfO 2 as top-gate dielectric for ultrahigh photoresponsivity

Extremely Low Dark Current MoS2 Photodetector Via 2D Halide Perovskite As the Electron Reservoir

Enhanced Visible to Near-Infrared Photodetectors Made from MoS2-based Mixed-Dimensional Structures

Highly Sensitive MoS2 Photodetector on Polarized Thin-Film Lithium Niobate with Extremely Low Dark Current

Suppress Dark‐Current for High‐Photoresponse MoS2 Transistor

Ultrafast and Highly Sensitive Dual-Channel FET Photodetector Based on a Two-Dimensional MoS2 Homojunction.

Highly Tunable, Broadband, and Negative Photoresponse MoS 2 Photodetector Driven by Ion-Gel Gate Dielectrics