Enhanced electrical and optical properties of porous W-doped V 2 O 5 films under thermally and electrically induced phase transition
Wenyan Dai,Yi Li,Zhen Yuan,Ke Lin,Jincheng Mei,Jiaqing Zhuang,Junyi Yan,Xingping Wang,Haoting Zhang,Weiye He,Chang Xue
DOI: https://doi.org/10.1016/j.infrared.2024.105123
IF: 2.997
2024-01-05
Infrared Physics & Technology
Abstract:Herein, the nanoscale porous W-doped V 2 O 5 thin film was prepared by sol–gel method and post-annealing process on fluorine-doped SnO 2 (FTO) conductive glass substrate using polyethylene glycol (PEG) as the structure guide agent. Then a metal–semiconductor-metal (MSM) structure device was fabricated based on the prepared film. The analysis of the surface morphology, elemental constituents, and photoelectric properties confirms the successful formation of a porous W-doped V 2 O 5 film, which exhibited improved electrical and optical properties. Under thermally and electrically induced phase transition, the maximum transmittance modulation depth of the film reached 17.74% at 700 nm between 20 °C and 320 °C and 36.46% at 600 nm under 0.5 V bias voltage, respectively. In the range of 700–1500 nm, the average value of the maximum transmittance modulation depth of the film also increased from 2.74% to 16.9% compared with V 2 O 5 film. With repeated temperature cycling, the film was able to maintain good electrical and optical properties, which is expected to be applied to novel integrated optoelectronic and electrochromic devices.
optics,physics, applied,instruments & instrumentation