Abstract:According to the International Electrotechnical Commission, medium voltage ranges from 1 kV to 36 kV. In this voltage range, the field of power electronics has been focusing on developing power converters with high efficiency. Converters for such applications include solid-state transformers, energy storage systems for vehicle charging, electric aircraft, etc. Power ranges could reach tens to hundreds of kilowatts at relatively high frequency (10–50 kHz). Currently, there are no high-frequency power semiconductors capable of switching these voltage levels. Instead of using a single power switch, a string of power switches is used. The upper switches in the string require special attention because they need the highest isolation capabilities and a floating control signal and power supply for the gate driver. Many techniques have been proposed to accomplish this, but they commonly use separate circuits for the control signal and the power supply, increasing the cost, size, and complexity of the gate driver. This paper presents a gate driver for medium voltage with high-voltage isolation capabilities in a single structure for the control signal and the power supply. The proposed gate driver uses a resonant converter that transmits power within the gate driver information. A demodulator separates the gate driver information from the power signal, obtaining the power supply and the control signal for the switch. The paper includes simulation and experimental results that demonstrate the viability of the proposal. The experimental results show the principal features of the gate driver, achieving improvements in complexity, isolation capabilities, and both rise and fall times for large input capacitances of power semiconductor switches. The proposed gate driver presents a rise time of 44 ns and a fall time of 46 ns for the gate input capacitance of currently available SiC MOSFETs. The isolation barrier uses a 25 mm air gap, achieving an isolation capability of approximately 68.2 kV, which exceeds the requirements for MV applications.

Design and Optimization of High Performance Gate Driver for Medium-Voltage SiC Power Modules

High-Density Current-Transformer-Based Gate-Drive Power Supply With Reinforced Isolation for 10-kV SiC MOSFET Modules

Dynamic Performance of 6.5kv/400a SiC MOSFET Module and Its Gate Driver

Design Considerations for High-Voltage Insulated Gate Drive Power Supply for 10-kV SiC MOSFET Applied in Medium-Voltage Converter

An Integrated Magnetically Isolated Gate Driver Architecture for SiC MOSFET Applications

Isolated Gate Driver for Medium Voltage Applications Using a Single Structure

An Active Gate Driver Design to Reduce Voltage and Current Overshoots for SiC MOSFET Modules

Gate Driver Development and Stray Inductance Extraction of 10 kV SiC MOSFET Module for a Switched-Capacitor MMC Application

Design and Evaluation of a High Performance Silicon Carbide MOSFET Driver

An Integrated Gate Driver Based on SiC MOSFETs Adaptive Multi-Level Control Technique

A high-power-density, high-speed gate driver for a 10 kV SiC MOSFET module

Performance Optimization of A 1.2kv SiC High Density Half Bridge Power Module in 3D Package

A Novel Gate Control Strategy for 3.4kv Cascade Sic Mosfets Stack

Comparative Analysis and Evaluation of Gate Driver Topologies for Paralleling Silicon Carbide (sic) Power Modules

A Novel Active Gate Driver with Auxiliary Gate Current Control Circuit for Improving Switching Performance of High-Power SiC MOSFET Modules

Comparative Design of Gate Drivers with Short-Circuit Protection Scheme for SiC MOSFET and Si IGBT

Gate Driver Design for SiC Power MOSFETs with a Low-Voltage GaN HEMT for Switching Loss Reduction and Gate Protection

A Double-Sided Cooling 6.5kv SiC MOSFET Power Module with Insulation Enhancement Design

Comparative Evaluation and Analysis of Gate Driver Impacts on a SiC MOSFET-Gate Driver Integrated Power Module

A Novel Single Isolation Channel Gate Driver with Bi-Directional-Signal and Forward-Power Transmission