Abstract:The higher voltage blocking capability and faster switching speed of silicon-carbide (SiC) mosfets have the potential to replace Si insulated gate bipolar transistors (IGBTs) in medium-low-voltage and high-power applications. In this paper, a state-of-the-art commercially available 325 A, 1700 V SiC mosfet module has been fully characterized under various load currents, bus voltages, and gate resistors to reveal their switching capability. Meanwhile, Si IGBT modules with similar power ratings are also tested under the same conditions. From the test results, several interesting points have been obtained: different to the Si IGBT module, the over-shoot current of the SiC mosfet module increases linearly with the increase of the load current and it has been explained by a model of the over-shoot current proposed in this paper; the induced negative gate voltage due to the complementary device turn-off (crosstalk effect) is more harmful to the SiC mosfet module than the induced positive gate voltage during turn-on when the gate off-voltage is 6 V; the maximum dvdt and didt (electromagnetic interference) during switching transients of the SiC mosfet module are close to those of the Si IGBT module when the gate resistance is larger than 8 but the switching loss of the SiC mosfet module is much smaller; the switching losses of the Si IGBT module are greater than those of the SiC mosfet module even when the gate resistance of the former is reduced to zero. An accurate power loss model, which is suitable for a three-phase two-level converter based on SiC mosfet modules considering the power loss of the parasitic capacitance, has been presented and verified in this paper. From the model, a 96.2 efficiency can be achieved at the switching frequency of 80kHz and the power of 100 kW.

Comparative Analysis and Evaluation of Gate Driver Topologies for Paralleling Silicon Carbide (sic) Power Modules

Active Gate Driver for Dynamic Current Balancing of Parallel-Connected SiC MOSFETs

An Active Gate Driver for Dynamic Current Sharing of Paralleled SiC MOSFETs

Active Gate Driver for Improving Current Sharing Performance of Paralleled High-Power SiC MOSFET Modules

Dynamic Performance of 6.5kV/400A SiC MOSFET Module and its Gate Driver

Design of Low Parasitic Inductance SiC MOSFETs Halfbridge Power Modules

Comparative Investigation on Paralleling Suitability for SiC MOSFETs and SiC/Si Cascode Devices

A Novel Gate Control Strategy for 3.4kv Cascade Sic Mosfets Stack

Comprehensive Analysis of Paralleled SiC MOSFETs Current Imbalance under Asynchronous Gate Signals

Dynamic Current Balancing for Paralleled SiC MOSFETs with Circuit Mismatches Considering Circulating C Urrent in Drive Circuit

An Active Gate Driver Design to Reduce Voltage and Current Overshoots for SiC MOSFET Modules

Digital Close-Loop Active Gate Driver for Static and Dynamic Current Sharing of Paralleled SiC MOSFETs

Symmetric Circuit Layout with Decoupled Modular Switching Cells for Multiparalleled SiC Mosfets

Parallel Connection of Silicon Carbide MOSFETs Challenges, Mechanism, and Solutions

Multichip Parallel Double-Sided Cooling Silicon Carbide Power Module With Low Parasitic Inductance and Balanced Dynamic Current

A 3600 V/80 A Series--Parallel-Connected Silicon Carbide MOSFETs Module With a Single External Gate Driver

An Online Unified Delay and Slew Rate Regulation for Current Sharing in Paralleled SiC Power Modules with Active Gate Drivers

Analysis on Static Current Sharing of N-Paralleled Silicon Carbide MOSFETs

Performance Evaluation of High-Power SiC MOSFET Modules in Comparison to Si IGBT Modules